Effect of Electrostatic Field Inversion in (10<inline-formula><math id="M2" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mover><mrow><mn mathvariant="normal">1</mn></mrow><mo>¯</mo></mover></math></inline-formula>1)-Plane InGaN Quantum Wells on Photoelectric Properties of Blue Light-Emitting Diodes

Ruimei Yin; Wei Jia; Hailiang Dong; Zhigang Jia; Tianbao Li; Chunyan Yu; Zhuxia Zhang; Bingshe Xu

doi:10.3788/AOS202242.2125001

Acta Optica Sinica, Volume. 42, Issue 21, 2125001(2022)

Effect of Electrostatic Field Inversion in (10 $\bar{1}$ 1)-Plane InGaN Quantum Wells on Photoelectric Properties of Blue Light-Emitting Diodes

Ruimei Yin¹, Wei Jia^1,2、*, Hailiang Dong¹, Zhigang Jia¹, Tianbao Li¹, Chunyan Yu¹, Zhuxia Zhang¹, and Bingshe Xu^1,2,3

Author Affiliations

¹Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, Shanxi , China

²Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030032, Shanxi , China

³Institute of Atomic and Molecular Science, Shaanxi University of Science & Technology, Xi′an710021, Shaanxi , China

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Ruimei Yin, Wei Jia, Hailiang Dong, Zhigang Jia, Tianbao Li, Chunyan Yu, Zhuxia Zhang, Bingshe Xu. Effect of Electrostatic Field Inversion in (10 $\bar{1}$ 1)-Plane InGaN Quantum Wells on Photoelectric Properties of Blue Light-Emitting Diodes[J]. Acta Optica Sinica, 2022, 42(21): 2125001

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Paper Information

Category: OPTOELECTRONICS

Received: Mar. 16, 2022

Accepted: May. 23, 2022

Published Online: Nov. 4, 2022

The Author Email: Jia Wei (jiawei@tyut.edu.cn)

DOI:10.3788/AOS202242.2125001

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