High Power Laser and Particle Beams, Volume. 34, Issue 9, 095018(2022)

Damage morphology of GaAs photoconductive switch

Huiru Sha1,2, Longfei Xiao1,2、*, Chongbiao Luan3, Zhuoyun Feng1,2,3, Yangfan Li1,2, Xun Sun1,2, Xiaobo Hu1,2, and Xiangang Xu1,2
Author Affiliations
  • 1Institute of Noval Semiconduction, Shandong University, Jinan 250100, China
  • 2State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • 3Institute of Fluid Physics, CAEP, Mianyang 621900, China
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    Figures & Tables(9)
    Structural schematic diagram of GaAs photoconductive switch
    Confocal response curves with different annular pupils
    Current value of photoconductive switch under different bias voltage and minimum on-resistance value of photoconductive switch
    Current value of photoconductive switch at different triggering energies and minimum on-resistance value of photoconductive switch
    Current value of photoconductive at different triggering number
    Analysis of damaged surface morphology of switches
    Diagram of damage between two electrodes of switch
    Damage caused by thermal stress
    3-D effect map of damage layer
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    Huiru Sha, Longfei Xiao, Chongbiao Luan, Zhuoyun Feng, Yangfan Li, Xun Sun, Xiaobo Hu, Xiangang Xu. Damage morphology of GaAs photoconductive switch[J]. High Power Laser and Particle Beams, 2022, 34(9): 095018

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    Paper Information

    Category: Special Power Supply Technology

    Received: Dec. 30, 2021

    Accepted: --

    Published Online: Aug. 17, 2022

    The Author Email: Xiao Longfei (xiaolongfei@sdu.edu.cn)

    DOI:10.11884/HPLPB202234.210579

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