Silica (SiQ)) thin films have enormous potential for applications in semiconductor devices, integrated circuits, optical coatings, and other fields due to their excellent optical properties. However, the preparation process of SiO, thin films faces some issues such as surface roughness, impurity control, and compactness. Tò adress these issues, researchers have improved the performance of SiO, thin films through process improvements and surface modifications. Among the many techniques for preparing SiO, thin films, plasma enhanced chemical vapor deposition (PECVD) has become the most commonly used method for preparing SiO,thin films due to its advantages such as low temperature required for deposition and in-situ growth. This artide reviews the development of preparing SiO, thin films using PECVD technology, and explores the influence of key process parameters and post-treatment processes on the quality of the films The in-depth study of PECVD technology helps to achieve more precise control of SiO, film growth and further expand its broad application prospects.