Researching | Experimental study on 5 MeV proton irradiation of enhancement-mode GaN HEMT devices

NUCLEAR TECHNIQUES, Volume. 47, Issue 12, 120503(2024)

Experimental study on 5 MeV proton irradiation of enhancement-mode GaN HEMT devices

Yiwu QIU, Lei DONG, Yanan YIN, and Xinjie ZHOU^*

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China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214035, China

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References(25)

[1] Hu X W, Karmarkar A P, Jun B et al. Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors[J]. IEEE Transactions on Nuclear Science, 50, 1791-1796(2003).

[2] Carbone M, Hirche K, Morand S et al. An overview of GaN FET technology, reliability, radiation and market for future space application[C], 1-4(2019).

[3] Khanna V K[M]. Extreme-temperature and harsh-environment electronics: physics, technology and applications(2017).

[4] Kanekal S, Baker D, Sibeck D. Recent advances in our understanding of the Earth’s Radiation Belts[C], 1345-1348(2019).

[5] Liu G P, Wang X, Li M N et al. Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode[J]. Nuclear Science and Techniques, 29, 139(2018).

[6] Hu X W, Choi B K, Barnaby H J et al. The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors[J]. IEEE Transactions on Nuclear Science, 51, 293-297(2004).

[7] Lo C F, Chang C Y, Chu B H et al. Proton irradiation effects on AlN/GaN high electron mobility transistors[J]. Journal of Vacuum Science & Technology B, 28, L47-L51(2010).

[8] Kim H Y, Kim J, Liu L et al. Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors[J]. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 30, 012202(2012).

[9] Zhang D L, Cheng X H, Shen L Y et al. Influence of poly-AlN passivation on the performance improvement of 3-MeV proton-irradiated AlGaN/GaN MIS-HEMTs[J]. IEEE Transactions on Nuclear Science, 66, 2215-2219(2019).

[10] Keum D M, Cha H Y, Kim H. Proton bombardment effects on normally- off AlGaN/GaN-on-Si recessed MIS heterostructure FETs[J]. IEEE Transactions on Nuclear Science, 62, 3362-3368(2015).

[11] BAI Ruxue, GUO Hongxia, ZHANG Hong et al. High-energy proton radiation effect of Gallium nitride power device with enhanced Cascode structure[J]. Acta Physica Sinica, 72, 44-50(2023).

[12] Wan X, Baker O K, McCurdy M W et al. Low energy proton irradiation effects on commercial enhancement mode GaN HEMTs[J]. IEEE Transactions on Nuclear Science, 64, 253-257(2017).

[13] Lee J H, Kim D S, Kim J G et al. Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs[J]. Radiation Physics and Chemistry, 184, 109473(2021).

[14] Huang X C, Liu Z Y, Lee F C et al. Characterization and enhancement of high-voltage cascode GaN devices[J]. IEEE Transactions on Electron Devices, 62, 270-277(2015).

[15] Jones E A, Wang F F, Costinett D. Review of commercial GaN power devices and GaN-based converter design challenges[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4, 707-719(2016).

[16] Roccaforte F, Greco G, Fiorenza P et al. An overview of normally-off GaN-based high electron mobility transistors[J]. Materials, 12, 1599(2019).

[17] Wu H, Fu X J, Luo J et al. Total ionizing dose effects on the threshold voltage of GaN cascode devices[J]. Micromachines, 14, 1832(2023).

[18] Faruk M G, Wilkins R, Dwivedi R C et al. Proton and neutron radiation effects studies of MOSFET transistors for potential deep-space mission applications[C], 1-13(2012).

[19] Seehra S S, Slusark W J. The effect of operating conditions on the radiation resistance of VDMOS power FETs[J]. IEEE Transactions on Nuclear Science, 29, 1559-1563(1982).

[20] TANG Changqin, WANG Duowei, GONG Min et al. Study on the static temperature characteristics of SiC MOSFET after gamma irradiation[J]. Electronics & Packaging, 21, 080402(2021).

[21] Sun X, Saadat O I, Chen J et al. Total-ionizing-dose radiation effects in AlGaN/GaN HEMTs and MOS-HEMTs[J]. IEEE Transactions on Nuclear Science, 60, 4074-4079(2013).

[22] CHEN Rui, LIANG Yanan, HAN Jianwei et al. Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays[J]. Acta Physica Sinica, 70, 116102(2021).

[23] LUO Yinhong, GUO Hongxia, ZHANG Keying et al. Electron beam irradiation effect on GaN HEMT[J]. Nuclear Techniques, 34, 507-511(2011).

[24] Alexander S H, Miaomiao J, Blair R T. Atomic displacement threshold energies and defect generation in GaN, AlN, and AlGaN: A high-throughput molecular dynamics investigation[J]. Applied Physics Letters, 124, 152107(2024).

[25] Xiao H Y, Gao F, Zu X T et al. Threshold displacement energy in GaN: Ab initio molecular dynamics study[J]. Journal of Applied Physics, 105, 334-338(2009).

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Yiwu QIU, Lei DONG, Yanan YIN, Xinjie ZHOU. Experimental study on 5 MeV proton irradiation of enhancement-mode GaN HEMT devices[J]. NUCLEAR TECHNIQUES, 2024, 47(12): 120503

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Paper Information

Category: NUCLEAR PHYSICS, INTERDISCIPLINARY RESEARCH

Received: Jul. 9, 2024

Accepted: --

Published Online: Jan. 15, 2025

The Author Email: ZHOU Xinjie (ZHOUXinjie)

DOI:10.11889/j.0253-3219.2024.hjs.47.120503

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