Chinese Journal of Lasers, Volume. 45, Issue 1, 103001(2018)

Study on Surface Characteristics of GaSb Materials After Plasma Nitrogen Passivation

Liu Xiaomin*, Fang Dan, Gu Libin, Fang Xuan, Wang Dengkui, Tang Jilong, Wang Xinwei, and Wang Xiaohua
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  • [in Chinese]
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    Figures & Tables(6)
    AFM diagrams of (a) sample 1, (b) sample 2, (c) sample 3, (d) sample 4, and (e) GaSb substrate; (f) root mean square roughness
    XPS diagrams of Ga 3d energy levels of different samples. (a) Sample 1; (b) sample 2; (c) sample 3; (d) sample 4
    Peak area of Ga—O bond and peak area ratio between Ga—N and Ga—O bonds
    XPS energy spectra of Ga 3d of different samples. (a) Sample 1; (b) sample 2; (c) sample 3; (d) sample 4
    Peak area of Sb—O bond and peak area ratio among Sb—O bonds of different samples and substrate
    (a) PL spectra of samples at room temperature under different etching cycles and (b) corresponding luminous intensities and FWHM
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    Liu Xiaomin, Fang Dan, Gu Libin, Fang Xuan, Wang Dengkui, Tang Jilong, Wang Xinwei, Wang Xiaohua. Study on Surface Characteristics of GaSb Materials After Plasma Nitrogen Passivation[J]. Chinese Journal of Lasers, 2018, 45(1): 103001

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    Paper Information

    Category: materials and thin films

    Received: Jul. 31, 2017

    Accepted: --

    Published Online: Jan. 24, 2018

    The Author Email: Xiaomin Liu (15714312116@163.com)

    DOI:10.3788/CJL201845.0103001

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