Photonics Research, Volume. 5, Issue 2, 113(2017)
Gap induced mode evolution under the asymmetric structure in a plasmonic resonator system
Fig. 1. MIM structure studied in this paper. The waveguide and ring resonator have a width of 50 nm, the nearest distance between the two subjects is 10 nm, and the nanogap in the ring resonator is 2 nm. For convenience, here we give two points
Fig. 2. Electric field distribution of the input field with wavelength (a) 982 and (b) 1081 nm. Here we take the gap as the origin point and rotate around the ring resonator CCW with an angle of
Fig. 3. Electric field distribution of the ring resonator in Fig.
Fig. 4. Transmission spectrum of (a) a perfect ring resonator. (b) The nanogap has an angle of
Fig. 5. Simulation of spectrum using the coupled mode theory (solid lines) and the FEM (dashed lines) with a different angle between the gap and point
Fig. 6. Transmission spectrum of the inside wall defect, in-ring defect, and exinous defect. Here we plot the transmission spectrum when the defects have an angle of
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Yong-Pan Gao, Tie-Jun Wang, Cong Cao, Chuan Wang, "Gap induced mode evolution under the asymmetric structure in a plasmonic resonator system," Photonics Res. 5, 113 (2017)
Category: Surface Plasmons
Received: Oct. 25, 2016
Accepted: Jan. 23, 2017
Published Online: Oct. 10, 2018
The Author Email: Chuan Wang (wangchuan@bupt.edu.cn)