Power consumption of 1.2 kV SiC MOSFET with integrated Low-Barrier Diode

SUN Jiameng; FU Hao; WEI Jiaxing; LIU Siyang; SUN Weifeng

doi:10.11805/tkyda2024224

Journal of Terahertz Science and Electronic Information Technology , Volume. 23, Issue 4, 309(2025)

Power consumption of 1.2 kV SiC MOSFET with integrated Low-Barrier Diode

SUN Jiameng^1,2, FU Hao^1,2, WEI Jiaxing^1,2, LIU Siyang^1,2、*, and SUN Weifeng^1,2

Author Affiliations

¹School of Integrated Circuit, Southeast University, Nanjing Jiangsu 210096, China

²National ASIC System Engineering Research Center, Southeast University, Nanjing Jiangsu 210096, China

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SUN Jiameng, FU Hao, WEI Jiaxing, LIU Siyang, SUN Weifeng. Power consumption of 1.2 kV SiC MOSFET with integrated Low-Barrier Diode[J]. Journal of Terahertz Science and Electronic Information Technology , 2025, 23(4): 309

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Paper Information

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Received: May. 24, 2024

Accepted: May. 29, 2025

Published Online: May. 29, 2025

The Author Email: LIU Siyang (liusy2855@163.com)

DOI:10.11805/tkyda2024224

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology