To address the issue of high freewheeling losses caused by SiC Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) during the freewheeling process in power modules, an integrated Low-Barrier Diode SiC MOSFET (LBD-MOS) structure is proposed. The total power consumption of LBD-MOS and the conventional SiC MOSFET (CON-MOS) under the same area is investigated. Simulation results show that the freewheeling voltage drop (U_F) of LBD-MOS is 1.6 V, which is 50% lower than that of CON-MOS; the switching loss (E_switch) of LBD-MOS is 187.3 μJ, which is 6% lower than that of CON-MOS. Under operating conditions with a frequency of 10 kHz and a duty cycle of 50%, the total power consumption of LBD-MOS is reduced by 22.6% compared to that of CON-MOS. LBD-MOS is suitable for applications where the freewheeling ratio is higher than 50% and the switching frequency does not exceed 1 MHz.