[1] [1] Pan Biwei, Yu Liqiang, Lu Dan, et al.. 20 kHz narrow linewidth fiber Bragg grating external cavity semiconductor laser[J]. Chinese J Laser, 2015, 42(5): 0502007.

[2] [2] Liu Yang, Li Lin, Qiao Zhongliang, et al.. Optical characteristics of 1.06 μm InGaAs/GaAs quantum well grown by MOCVD[J]. Chinese J Laser, 2014, 41(11): 1106001.

[3] [3] Liu Yun, Zhao Shanghong, Yang Shengsheng, et al.. Study on space radiation effects of laser diodes based on Poisson process[J]. Chinese J Laser, 2014, 41(10): 1002002.

[4] [4] Zheng Xiaogang, Li Te, Lu Peng, et al.. Analysis of temperature characteristics of 980 nm semiconductor laser[J]. Chinese J Laser, 2013, 40(11): 1102004.

[5] [5] Yu Haiying, Cui Bifeng, Chen Yixin, et al.. A novel semiconductor laser diode with large cavity for high efficiency coupling with the optical fibers[J]. Acta Physica Sinica, 2007, 56(7): 3945-3949.

[6] [6] Sebastian J, Beister G, Bugge F, et al.. High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2001, 7(2): 334-339.

[7] [7] Qiu B C, Kowalski O P, Mcdougall S, et al.. High-performance red lasers with low beam divergence[J]. IEEE Photonics Journal, 2009, 1(3): 172-177.

[8] [8] Li Jianjun, Cui bifeng, Deng Jun, et al.. 980 nm high power semiconductor laser with asymmetric supper large optical cavity[J]. Chinese J Laser, 2013, 40(11): 1102011.

[9] [9] Huang Dexiu. Semiconductor optoelectronics[M]. Beijing: Publishing House of Electronics Industry, 2013: 195.

[10] [10] Yu Bo, Gai Hongxing, Han Jun, et al.. Optimization of MOCVD-growth strain InGaAs/GaAs quantum well and its application for 980 nm LD[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 81-84.

[11] [11] Lichtenstein N, Winterhoff R, Scholz F, et al.. The impact of LOC-structures on 670 nm (Al)GaInP high-power lasers[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2000, 6(4): 564-570.

[12] [12] Chong Feng, Wang Jun, Xiong Cong, et al.. Optimum the thickness of p-waveguide layer for high conversion efficiency diode lasers[J]. Acta Optica Sinica, 2009, 39(12): 3419-423.

[13] [13] Zhang Xiangwei. Polarization control of high-power vertical-cavity surface-emitting lasers[D]. Beijing: University of Chinese Academy of Sciences, 2013: 61-62.

[14] [14] Wiedmann N, Jandeleit J, Mikulla M, et al.. Improved high-temperature operation of InGaAs/AlGaAs LOC SQW diode lasers by incorporation of short-period superlattice quantum-well barriers[C]. SPIE, 2001, 4283: 247-255.