[1] AYYILDIZ E, CETIN H, HORVÁTH Z J. Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes[J]. Applied Surface Science, 252, 1153-1158(2005).

[2] ÇALDIRAN Z, DENIZ A R, MEHMET COŞKUN F et al. I-V-T (current-voltage-temperature) characteristics of the Au/Anthraquinone/p-Si/Al junction device[J]. Journal of Alloys and Compounds, 584, 652-657(2014).

[3] WU Chen, FANG Xudong, LIU Feng et al. High speed and low roughness micromachining of silicon carbide by plasma etching aided femtosecond laser processing[J]. Ceramics International, 46, 17896-17902(2020).

[4] AZEVEDO R G, JONES D G, JOG A V et al. A SiC MEMS resonant strain sensor for harsh environment applications[J]. IEEE Sensors Journal, 7, 568-576(2007).

[5] NAKAO S, ANDO T, SHIKIDA M et al. Mechanical properties of a micron-sized SCS film in a high-temperature environment[J]. Journal of Micromechanics and Microengineering, 16, 715-720(2006).

[6] RABIER J, RENAULT P O, EYIDI D et al. Plastic deformation of silicon between 20 ℃ and 425 ℃[J]. Physica Status Solidi C, 4, 3110-3114(2007).

[7] REN J, WARD M, KINNELL P et al. Plastic deformation of micromachined silicon diaphragms with a sealed cavity at high temperatures[J]. Sensors, 16, 204(2016).

[8] NGUYEN T, PHAN H, DINH T et al. Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures[J]. Materials & Design, 156, 441-445(2018).

[9] SHI Yunbo, SUN Yanan, LIU Jun et al. UV nanosecond laser machining and characterization for SiC MEMS sensor application[J]. Sensors and Actuators A: Physical, 276, 196-204(2018).

[10] MIDDELBURG L M, van ZEIJL H W, VOLLEBREGT S et al. Toward a self-sensing piezoresistive pressure sensor for all-SiC monolithic integration[J]. IEEE Sensors Journal, 20, 11265-11274(2020).

[11] GAO Bo, ZHAI Wenjie, ZHAI Quan et al. Electro-chemical mechanical polishing of 4H-SiC for scratch-free surfaces with less oxide layer at high efficiency[J]. ECS Journal of Solid State Science and Technology, 8, 677-684(2019).

[12] CHEN Gaopan, LI Jiangguo, LUO Haimei et al. One-step fabrication of fine surfaces via femtosecond laser on sliced SiC[J]. Materials Science in Semiconductor Processing, 132, 105926(2021).

[13] OSIPOV A A, IANKEVICH G A, SPESHILOVA A B et al. High-temperature etching of SiC in SF6/O2 inductively coupled plasma[J]. Scientific Reports, 10, 19977(2020).

[14] ZHUANG Dejin, EDGAR J H. Wet etching of GaN, AlN, and SiC: a review[J]. Materials Science and Engineering: R: Reports, 48, 1-46(2005).

[15] LIU Xinfang, YAN Guoguo, SANG Ling et al. Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching[J]. Journal of Crystal Growth, 531, 125359(2020).

[16] ZHANG Yi, CHEN Hongyingnan, LIU Dianzi et al. High efficient polishing of sliced 4H-SiC (0001) by molten KOH etching[J]. Applied Surface Science, 525, 146532(2020).

[17] LUNA L E, TADJER M J, ANDERSON T J et al. Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments[J]. Journal of Micromechanics and Microengineering, 27, 95004(2017).

[18] SUNG Hokun, QIANG Tian, YAO Zhao et al. Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications[J]. Scientific Reports, 7, 3915(2017).

[19] DOWLING K M, RANSOM E H, SENESKY D G. Profile evolution of high aspect ratio silicon carbide trenches by inductive coupled plasma etching[J]. Journal of Microelectromechanical Systems, 26, 135-142(2017).

[20] HUFF M, PEDERSEN M. Electrical field-induced faceting of etched features using plasma etching of fused silica[J]. Journal of Applied Physics, 122, 23302(2017).

[21] LI Weinan, ZHANG Ruoheng, LIU Yongsheng et al. Effect of different parameters on machining of SiC/SiC composites via pico-second laser[J]. Applied Surface Science, 364, 378-387(2016).

[22] RETHFELD B, SOKOLOWSKI-TINTEN K, von der LINDE D et al. Timescales in the response of materials to femtosecond laser excitation[J]. Applied Physics A, 79, 767-769(2004).

[23] WANG Lukang, ZHAO You, YANG Zixuan et al. Femtosecond laser micromachining in combination with ICP etching for 4H-SiC pressure sensor membranes[J]. Ceramics International, 47, 6397-6408(2021).

[24] XIE Xiaozhu, PENG Qingfa, CHEN Gaopan et al. Femtosecond laser modification of silicon carbide substrates and its influence on CMP process[J]. Ceramics International, 47, 13322-13330(2021).

[25] TOMITA T, KINOSHITA K, MATSUO S et al. Distinct fine and coarse ripples on 4H-SiC single crystal induced by femtosecond laser irradiation[J]. Japanese Journal of Applied Physics, 45, 444-446(2006).

[26] OKADA T, KAWAHARA H, ISHIDA Y et al. Cross-sectional TEM analysis of laser-induced ripple structures on the 4H-SiC single-crystal surface[J]. Applied Physics A, 92, 665-668(2008).

[27] YAMAGUCHI M, UENO S, KUMAI R et al. Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC[J]. Applied Physics A, 99, 23-27(2010).

[28] TOMITA T, OKADA T, KAWAHARA H et al. Microscopic analysis of carbon phases induced by femtosecond laser irradiation on single-crystal SiC[J]. Applied Physics A, 100, 113-117(2010).

[29] VARLAMOVA O, REIF J, VARLAMOV S et al. The laser polarization as control parameter in the formation of laser-induced periodic surface structures: Comparison of numerical and experimental results[J]. Applied Surface Science, 257, 5465-5469(2011).

[30] PECHOLT B, VENDAN M, DONG Yuanyuan et al. Ultrafast laser micromachining of 3C-SiC thin films for MEMS device fabrication[J]. The International Journal of Advanced Manufacturing Technology, 39, 239-250(2008).

[31] DONG Yuanyuan, NAIR R, MOLIAN R et al. Femtosecond-pulsed laser micromachining of a 4H-SiC wafer for MEMS pressure sensor diaphragms and via holes[J]. Journal of Micromechanics and Microengineering, 18, 35022(2008).

[32] ZHAO You, ZHAO Yulong, WANG Lukang. Application of femtosecond laser micromachining in silicon carbide deep etching for fabricating sensitive diaphragm of high temperature pressure sensor[J]. Sensors and Actuators A: Physical, 309, 112017(2020).

[33] YE Dahua. Analysis of characteristics of Gaussian beam and its application[J]. Laser Technology, 43, 142-146(2019).