[1] Morgner U, Ell R, Metzler G, et al. Nonlinear optics with phase-controlled pulses in the sub-two-cycle regime[J]. Physical Review Letters, 86, 5462(2001).

[2] Jia Zixi, Huang Song, Jin Xiaorong, et al. Research and development of femtosecond laser supersaturated doped silicon materials[J]. Opto-Electronic Engineering, 44, 1146-1159(2017).

[3] Jin Xiaorong, Wu Qiang, Huang Song, et al. Research progress of femtosecond laser supersaturated doped silicon-based photodetectors[J]. Laser & Optoelectronics Progress, 57, 111428(2020).

[4] Xu Lijun, Zhang Xihe, Cai Hongxing, et al. Study on determine damage of photoelectric detector irradiated by high power laser[J]. Laser & Infrared, 39, 1263-1266(2009).

[5] [5] Zakharova I K, Rafailov M K. Detect response to high repetition rate ultrasht laser pulses. I[C]SPIE, Micro Nanotechnology Senss, Systems, & Applications VII, 2015, 9467: 946726.

[6] Dou Xian'an, Sun Xiaoquan. Femtosecond laser-induced transient bleaching effect modeling of direct band gap semiconductors[J]. Chinese Journal of Lasers, 39, 0602007(2012).

[7] Hu Wei, Sun Xiaoquan, Dou Xian'an. Negative voltage response mechanism of InGaAs PIN tube under mode-locked laser irradiation[J]. Journal of Infrared and Millimeter Waves, 34, 36-40(2015).

[8] Hu Wei, Dou Xian'an, Sun Xiaoquan. The analysis of the photo-carriers of the InGaAs p-i-n phtodiode response to the high optical injection[J]. Acta Photonica Sinica, 43, 0625001(2014).

[9] Cui Haoyang, Li Zhifeng, Ma Fajun, et al. New phenomenon of negative photovoltaic response of mercury cadmium telluride photovoltaic infrared detectors under picosecond pulse laser irradiation[J]. Journal of Infrared and Millimeter Waves, 28, 161-164(2009).

[10] Cui H, Zeng J, Tang N, et al. Study of Schottky contact in HgCdTe infrared photovoltaic detectors[J]. Optical & Quantum Electronics, 45, 635-640(2013).

[11] Ma Liqin, Lu Qisheng, Ju Bo. Laser soft damage mechanism of photovoltaic photodetectors[J]. High Power Laser and Particle Beams, 18, 917-921(2006).

[12] [12] Dong Z, Su S, Xia Y, et al. Output properties of photovoltaic detects irradiated under femtosecond pulses[C]Academic International Symposium on Optoelectronics & Microelectronics Technology. IEEE, 2012.

[13] Dou Xian'an, Sun Xiaoquan, Wang Zuolai. Experimental study of femtosecond laser-induced saturation characteristics of silicon PIN photodiodes[J]. Journal of Quantum Electronics, 29, 671-676(2012).

[14] Chu Ning, Cao Lijun, Huang Wei. Analysis of PIN photodiode response time based on light intensity[J]. Journal of Transducer Technology, 26, 34-37(2013).

[15] Xu Zuodong, Zhang Jianmin, Lin Xinwei, et al. Degradation of transient response characteristics of HgCdTe photovoltaic detectors under nanosecond laser irradiation[J]. Infrared and Laser Engineering, 47, 0106001(2018).

[16] Wang Wei, Bai Chenxu, Feng Qi, et al. Influence of structure parameters on performance of silicon PIN photodetector[J]. Semiconductor Optoelectronics, 3, 379-382(2013).

[17] Kyomasu M. Development of an integrated high speed silicon PIN photodiode sensor[J]. IEEE Transactions on Electron Devices, 42, 1093-1099(1995).

[18] Fang Alexander W, Jones Richard, Park Hyundai, et al. Integrated AlGaInAs-silicon evanescent race track laser and photodetector[J]. Optics Express, 15, 2315-2322(2007).

[19] [19] Uherek F, Hasko D, Chovan J. Optical response time of InGaAs(P)InP photodiodes[C]International Euroconference on Advanced Semiconduct Devices & Microsystems. IEEE, 2000.

[20] [20] Neamen D A. An Introduction to Semiconduct Devices[M]. Translated by Xie Sheng. Beijing: Publishing House of Electronics Industry, 2015: 265266. (in Chinese)

[21] Laird J S, Hirao T, Onoda S, et al. High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors[J]. Journal of Applied Physics, 98, 013530(2005).