Acta Optica Sinica, Volume. 45, Issue 7, 0700001(2025)

Research Progress of Terahertz Phased Array Technology (Invited)

Peihang He1,2, Haochi Zhang1,2、*, Haoli Hong3, Wen Li4, Hao Wang4, Dayue Yao1, and Qi Yang5、**
Author Affiliations
  • 1State Key Laboratory of Millimeter Waves, School of Information Science and Engineering, Southeast University, Nanjing 210096, Jiangsu , China
  • 2Institute of Electromagnetic Space, Southeast University, Nanjing 210096, Jiangsu , China
  • 3School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu 611731, Sichuan , China
  • 4Yingcai Honors College, University of Electronic Science and Technology of China, Chengdu 611731, Sichuan , China
  • 5School of Electronic Science, National University of Defense Technology, Changsha 410073, Hunan , China
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    Figures & Tables(31)
    THz active phased array based on 65 nm-CMOS technology[26]. (a) Phased array structure based on locally coupled radiators; (b) integrated chip micrograph
    370‒410 GHz phased array transmitter. (a) System circuit block diagram[30]; (b) phased array transmitter micrograph[29]
    0.53 THz subharmonic phased array based on injection-locked oscillator (ILO) chain[31]. (a) Block diagram of 0.53-THz phased array; (b) 0.53 THz phased array chip micrograph
    0.416 THz 2D emission array based on dual-core distributed oscillator[32]. (a) Dual-core distributed oscillator network structure and robustness analysis; (b) chip microphotograph of coupled dual-core oscillator; (c) micrograph of antenna array
    Scalable wafer-scale phased array at 140 GHz[33]. (a) Internal composition of TRX and UDC channels; (b) chip layout
    340-GHz amplifier-frequency-multiplier chain design[34]. (a) Architecture of amplifier-frequency-multiplier chain; (b) chip photo
    320-GHz 1×4 fully integrated phased array transmitter[35]. (a) Schematic diagram of fully integrated phased-array transmitter; (b) micrograph of proposed THz phased array transmitter
    Standing-wave 2D phased array at 318‒370 GHz[36]. (a) Structure of 2×2 standing-wave phased array with onchip patch antennas; (b) photo of proposed standing-wave 2D phased array
    0.41-THz coherent harmonic radiation array based on mode-dependent boundaries[38]. (a) Physical structure of coherent array; (b) CPW coupling; (c) shared slot coupling; (d) electrical field distributions for odd-mode and even-mode; (e) layout of half unit in HFSS software
    1×4 bidirectional D-band phased-array transceiver in 130-nm BiCMOS technology[39]. (a) Block diagram of IQ transceiver with direct conversion; (b) micrograph of phased-array transceiver chip
    THz passive phased array based on liquid crystal programmable metasurface[60]. (a) Unit cell of liquid crystal programmable metasurface; (b) THz programmable metasurface and its controlling circuit; (c) coding sequence of programmable metasurface
    Manipulations of THz beams by transmissive programmable metasurfaces based on liquid crystals[61]. (a) Fabricated prototype; (b) microscopic image of a group of metasurface unit cells; (c) 3D schematic diagram of metasurface unit; (d) 3D diagram of proposed programmable metasurface with different beam manipulation functions
    Flexible THz beam manipulations based on liquid-crystal integrated programmable metasurfaces[62]. (a) Schematic of beam steering based on THz programmable metasurface array; (b) schematic of THz metasurface array placed on PCB; (c) schematic of THz far-field measurement setup for metasurface array
    Two-dimensional THz beam manipulations based on liquid-crystal-assisted programmable metasurface[63]. Structures of designed metasurface elements at (a) 94 GHz and (b) 220 GHz; (c) schematic diagram of 2D THz programmable metasurface
    THz on-chip programmable metasurface based on CMOS technology[64]. (a) 12×12 metasurface array and metasurface unit; (b) schematic diagram of THz metasurface
    Electronic THz beam forming and 2D steering for high angular-resolution operation[65]. (a) Diagram of 1-bit phase-shifting operation; (b) diagram of antenna unit; (c) architecture and operation of presented 265 GHz CMOS reflectarray; (d) photos of CMOS chip and array assembly
    Programmable metasurface based on GaN HEMT[66]. (a) 3D schematic diagrams of element and programmable metasurface; (b) photos of programmable metasurface
    Phase modulation of terahertz programmable metasurface based on free carrier plasma dispersion effect[67]. (a) Schematic diagram of working principle of unit structure; (b) demonstration of beam deflection function
    THz metasurface based on VO2[68]. (a) Schematic diagram of metasurface; (b) schematic diagram of metasurface unit cell; (c) photograph of metasurface sample
    THz metasurface based on GeTe[69]. (a) Schematic diagram of metasurface; (b) reconfigurable mechanism of metasurface
    Programmable metasurface based on dual layer graphene structure[70]. (a) Programmable metasurface unit based on dual layer graphene structure; (b) unit equivalent circuit model; (c) schematic diagram of metasurface functions
    Tunable metasurfaces based on nonuniform periodic graphene arrays[71]. (a) Schematic of metasurface; (b) nonuniform periodic graphene arrays; (c) graphene sheet; (d) schematic of beam scanning, where θmax is maximum deflection angle
    All-solid-state reflective THz phased array based on graphene metasurface[72]. (a) Schematic diagram of graphene metasurface unit structure; (b) schematic diagram of wide-angle scanning based on graphene metasurface
    Programmable graphene metasurface for terahertz propagation control based on electromagnetically induced transparency[73]. (a) Schematic diagram of basic cell; (b) schematic diagram of programmable graphene metasurface
    Terahertz passive phased array based on dual resonance characteristics[74]. (a) Schematic diagram of antenna array; (b) left view of structural unit; (c) top view of structural unit; (d) equally spaced phase difference encoding; (e) microscope image of processed sample; (f) processed graphene-metal hybrid metasurface
    Passive multifunctional MEMS THz passive phased array[75]. (a) Model of MEMS-based MIM metadevice in one-port system with incidence and reflection; (b) one-dimensional encoding scheme; (c) two-dimensional encoding scheme
    Electrically programmable THz diatomic passive phased array for chiral optical control[76]. (a) SEM images of one bimorph microhelix in suspended state (defined as OFF, 3D configuration) and actuated states (ON, 2D planar configuration); (b) scheme of metamaterial array comprising of diatomic metamolecules with microhelices of opposite handedness and two actuation channels (C1 and C2); (c) schematic diagram of electrically programmable chiral platform
    All-optical active THz passive phased array for ultrafast polarization switching and dynamic beam splitting[77]. (a) Schematic diagram of hybrid metasurface operating as active polarizing beam splitter; (b) schematic illustrations of anisotropic h-SRR with different configurations relative to incident electric field polarization; (c) microscopic image of fabricated hybrid metasurface
    Spatiotemporal dielectric THz passive phased array for unidirectional propagation and reconfigurable steering of terahertz beams[78]. (a) Schematic diagram of spatiotemporal metasurface; (b) scanning electron microscopy (SEM) image of fabricated samples with Kerker resonators, and schematic illustration of unit cell with optimized geometrical parameters
    • Table 1. Performance comparison of terahertz active phased array

      View table

      Table 1. Performance comparison of terahertz active phased array

      Ref. NoCountryFrequency /GHzArray sizeEIRP /dBmScanning rangeTechnology
      26USA3384×417.145°/50°(E/H65 nm CMOS
      29USA374-4078×1875°(H45 nm CMOS
      31Belgium531.51×42.360°(E40 nm CMOS
      32USA4164×41460°/60°(E/H65 nm CMOS
      33USA137.5-1458×837.5±60°(H45 nm RFSOI
      35China3201×410.6±12°(E

      130 nm

      SiGe BiCMOS

      36USA3442×24.9128°/53°(E/H130 nm SiGe
      38China4064×412.72130 nm SiGe
      39Germany110-1701×4Fixed130 nm SiGe
    • Table 2. Summary of passive phased arrays

      View table

      Table 2. Summary of passive phased arrays

      Ref. NoCountryFrequency /GHzArray sizeScan range /(°)MaterialTypeRelative bandwidth /%
      60China67250×2432Liquid crystalReflection
      61China42648×4830Liquid crystalTransmission
      62China67564×6440Liquid crystalReflection5
      63China220/9432×2820-60Liquid crystalReflection10
      64USA30024×243065 nm CMOSTransmission
      65USA26598×9812065 nm CMOSReflection
      66China34064×6420-60GaNTransmission20
      67China4003250SemiconductorReflection17
      68China42548×9042.8VO2Reflection
      69China10020×2030GeTeReflection20
      70Iran200068×68GrapheneReflection
      71China500035.5GrapheneReflection
      72China464079.11GrapheneReflection
      73China7006×6±36GrapheneTransmission40
      74China1030±25GrapheneReflection
      75Singapore800±70MEMSReflection
      76Singapore400±25MEMSReflection
      77Singapore600-1000±80SiTransmission
      78Singapore58034.7SiReflection
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    Peihang He, Haochi Zhang, Haoli Hong, Wen Li, Hao Wang, Dayue Yao, Qi Yang. Research Progress of Terahertz Phased Array Technology (Invited)[J]. Acta Optica Sinica, 2025, 45(7): 0700001

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    Paper Information

    Category: Reviews

    Received: Nov. 19, 2024

    Accepted: Jan. 3, 2025

    Published Online: Apr. 28, 2025

    The Author Email: Haochi Zhang (hczhang0118@seu.edu.cn), Qi Yang (yangqi08@nudt.edu.cn)

    DOI:10.3788/AOS241766

    CSTR:32393.14.AOS241766

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