Chinese Optics Letters, Volume. 13, Issue 2, 021301(2015)

Study of selectively buried ion-exchange glass waveguides using backside masking

Chongyang Pei1, Gencheng Wang1, Bing Yang1, Longzhi Yang1, Yinlei Hao1,2, Xiaoqing Jiang1,2, and Jianyi Yang1,2、*
Author Affiliations
  • 1Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou 310027, China
  • 2Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China
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    Figures & Tables(5)
    Schematic of the chip, and the definition of D.
    Process flow for the realization of SBWs. (a) The mask deposition, photolithography process, and chemical etching and backside mask deposition. (b) The thermal Ag+/Na+ exchange. (c) The chemical etching of both masks. (d) The backside dielectric mask deposition. (e) The electric-assisted ion-diffusion.
    (a) Buried depth. (b) The output cross-section view of the waveguides.
    The schematic of the different regions of the SBW.
    The measured IL of the SBWs, with the different lengths of the backside mask.
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    Chongyang Pei, Gencheng Wang, Bing Yang, Longzhi Yang, Yinlei Hao, Xiaoqing Jiang, Jianyi Yang, "Study of selectively buried ion-exchange glass waveguides using backside masking," Chin. Opt. Lett. 13, 021301 (2015)

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    Paper Information

    Category: Integrated Optics

    Received: Sep. 15, 2014

    Accepted: Nov. 14, 2014

    Published Online: Sep. 25, 2018

    The Author Email: Jianyi Yang (yangjy@zju.edu.cn)

    DOI:10.3788/COL201513.021301

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