Fig. 1. Schematic diagram of heterogeneous structure （a）Fixed-point transfer technology，（b）optical micrograph of heterostructure structure

Fig. 2. （a）Schematic diagram of graphene-black arsenic heterojunction detector，（b）drain-current characteristic curve in the absence of light （black line）and under 520nm laser irradiation （green line），（c）drain-current characteristic curve under the 638nm laser irradiation （red line），（d）drain-current characteristic curve under dark condition （black line）and 1550nm laser irradiation （blue line），（e）optical response waveform diagram under the 1550nm laser irradiation，（f）response time measurement.

Fig. 3. （a）Energy band diagram of graphene-black arsenic van der Waals heterojunction，（b）photoresponse of graphene devices and heterojunction devices under different powers of 520 nm laser irradiation，（c）laser irradiation at 520 nm_1.12 mW power The scanning photocurrent diagram below，the inset is the optical micrograph of the heterojunction device，（d）the scanning photocurrent diagram under 520 nm_0.058 mW laser irradiation.

Fig. 4. （a）The photoresponse of the heterojunction device under the frequency of 0.02-0.04THz，（b）the photocurrent changes with the irradiation of different incident microwave light power，（c）the normalized photocurrent under 0.026THz radiation is recorded by an oscilloscope A light response waveform，（d）normalized rise and fall response time