Journal of Infrared and Millimeter Waves, Volume. 43, Issue 1, 1(2024)

High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature

Yu-Fei QI1,2,5, Wen-Juan WANG2、*, Jing-Hua SUN2,3, Wen WU4, Yan LIANG4, Hui-Dan QU2, Min ZHOU2, and Wei LU1,2、**
Author Affiliations
  • 1Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China
  • 2State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 3University of Shanghai for Science and Technology,Shanghai 200093,China
  • 4School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China
  • 5University of Chinese Academy of Sciences,Beijing 100049,China
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    Figures & Tables(13)
    Cross-sectional schematic of the InGaAsP/InP APD
    2D electric field distribution at 2 V over bias
    Calculated Pa and PDE versus overbias
    Physical appearance of an InGaAsP/InP SPAD
    I-V curves at different temperatures
    Schematic diagram of gated-mode single-photon detection system
    DCRs and APPs corresponding to different PDEs at 293 K
    The DCR versus temperature at different PDEs
    Linear fit of ln (DCR/T2) versus 1/kT at various PDEs
    Ea versus PDEs
    APPs versus temperatures at different PDEs
    PDEs at different temperatures under the active quenching mode
    DCRs at different temperatures under the active quenching mode
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    Yu-Fei QI, Wen-Juan WANG, Jing-Hua SUN, Wen WU, Yan LIANG, Hui-Dan QU, Min ZHOU, Wei LU. High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature[J]. Journal of Infrared and Millimeter Waves, 2024, 43(1): 1

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    Paper Information

    Category: Research Articles

    Received: Mar. 31, 2023

    Accepted: --

    Published Online: Dec. 26, 2023

    The Author Email: Wen-Juan WANG (wangwj@mail.sitp.ac.cn), Wei LU (luwei@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2024.01.001

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