[1] Schaibley J.R., Yu H.-Y., Clark G. et al. Valleytronics in 2D materials. Nat. Rev. Mater., 1, 16055(2016).

[2] Ahmad W., Pan L., Khan K., Jia L.-P., Zhuang Q.-D., Wang Z.-M.. Progress and insight of van der Waals heterostructures containing interlayer transition for near infrared photodetectors. Adv. Funct. Mater., 33, 2300686.(2023).

[3] Ahmad W., Ullah Z., Khan K.. Stretchable photodetectors based on 2D materials: materials synthesis. fabrications and applications, FlatChem, 36, 100452(2022).

[4] [4] R. MasBallesté, C. GómezNavarro, J. GómezHerrero, F. Zama, 2D materials: to graphene beyond, Nanoscale 3 (1) (2011) 20–30.

[5] Aleithan S.H., Younis U., Alhashem Z., Ahmad W.. Graphene electrode-enhanced InSe/WSe₂ van der Waals heterostructure for high-performance broadband photodetector with imaging capabilities. J. Alloy. Compd., 1006, 176356(2024).

[6] Rong R., Liu Y., Nie X.-C. et al. The interaction of 2D materials with circularly polarized light. Adv. Sci., 10, 2206191(2023).

[7] Ahmad W., Rehman M.U., Pan L. et al. Ultrasensitive near-infrared polarization photodetectors with violet phosphorus/InSe van der Waals heterostructures. ACS Appl. Mater. Interfaces, 16, 19214-19224(2024).

[8] Ahmad W., Wu J., Zhuang Q.-D., Neogi A., Wang Z.-M.. Research process on photodetectors based on group‐10 transition metal dichalcogenides. Small, 19, 2207641(2023).

[9] Ahmad W., Liu J.-D., Jiang J.-Z. et al. Strong interlayer transition in few‐layer InSe/PdSe₂ van der Waals heterostructure for near‐infrared photodetection. Adv. Funct. Mater., 31, 2104143(2021).

[10] Li X., Liu H.-Y., Ke C.-M. et al. Review of anisotropic 2D materials: controlled growth. optical anisotropy modulation, and photonic applications, Laser Photonics Rev., 15, 2100322(2021).

[11] Yuan H.-T., Liu X.-G., Afshinmanesh F. et al. Polarization-sensitive broadband photodetector using a black phosphorus vertical p-n junction. Nat. Nanotechnol., 10, 707-713(2015).

[12] Hou H.-Y., Tian S., Ge H.-R., Chen J.-D., Li Y.-Q., Tang J.-X.. Recent progress of polarization‐sensitive perovskite photodetectors. Adv. Funct. Mater., 32, 2209324(2022).

[13] Ahmad W., Abbas A., Younis U., Zhang J.-Y., Aleithan S.H., Wang Z.-M.. Advancements in optoelectronics: harnessing the potential of 2D violet phosphorus. Adv. Funct. Mater., 34, 2410723(2024).

[14] [14] K.S. Novoselov, A. Mishchenko, A. Carvalho, A.H. Castro o, 2D materials van der Waals heterostructures, Science 353(6298) (2016) aac9439.

[15] Ahmad W., Rehman M.U., Younis U. et al. Interlayer charge transition and broadband polarization photodetection and imaging based on In₂Se₃/ReS₂ van der Waals heterostructure. Laser Photonics Rev., 19, 2400819(2025).

[16] Ahmad W., Tareen A.K., Khan K. et al. A review of the synthesis. fabrication, and recent advances in mixed dimensional heterostructures for optoelectronic devices applications, Appl. Mater. Today, 30, 101717(2023).

[17] Oyedele A.D., Yang S.-Z., Liang L.-B. et al. PdSe₂: pentagonal two-dimensional layers with high air stability for electronics. J. Am. Chem. Soc., 139, 14090-14097(2017).

[18] Liang Q.-J., Wang Q.-X., Zhang Q. et al. High‐performance. room temperature, ultra‐broadband photodetectors based on air‐stable PdSe2, Adv. Mater., 31, 1807609(2019).

[19] Li G., Yin S.-Q., Tan C.-Y. et al. Fast photothermoelectric response in CVD‐grown PdSe₂ photodetectors with in‐plane anisotropy. Adv. Funct. Mater., 31, 2104787(2021).

[20] Wei. J. Lian M.-Y., Zhang Y., Wang et al. C.-L.. Layer-dependent optical and dielectric properties of centimeter-scale PdSe₂ films grown by chemical vapor deposition. npj 2D Mater. Appl., 6, 1.(2022).

[21] Hao Q.-Y., Huang J.-R., Liu J.-D. et al. Controllable phase transformation by van der Waals encapsulation in electrochemically exfoliated PdSe₂ nanosheets. Adv. Funct. Mater., 34, 2316733(2024).

[22] Gu Y.-Y., Zhang L.-Z., Cai H. et al. Stabilized synthesis of 2D verbeekite: monoclinic PdSe₂ crystals with high mobility and in-plane optical and electrical anisotropy. ACS Nano, 16, 13900-13910(2022).

[23] Zhang K.-C., Cheng L.-Y., Shen C., Li Y.-F., Liu Y., Zhu Y.. Thickness-dependent anisotropic transport of phonons and charges in few-layered PdSe₂. Phys. Chem. Chem. Phys., 23, 18869-18884(2021).

[24] Tao R., Yang Z.-H., Tan C. et al. Growth of Fe-doped and V-doped MoS₂ and their magnetic-electrical effects. Journal of Electronic Science and Technology, 20, 100167(2022).

[25] Zhang Z.-C., Zhang X.-Q.-Y., Hu M.. Simple ultrasonic-assisted clean graphene transfer. Journal of Electronic Science and Technology, 20, 100168(2022).

[26] Xie C.-Y., Jiang S.-L., Gao Y.-L. et al. Giant thickness‐tunable bandgap and robust air stability of 2D palladium diselenide. Small, 16, 2000754.(2020).

[27] Zeng L.-H., Wu D., Lin S.-H. et al. Controlled synthesis of 2D palladium diselenide for sensitive photodetector applications. Adv. Funct. Mater., 29, 1806878(2019).

[28] Nishiyama W., Nishimura T., Ueno K., Taniguchi T., Watanabe K., Nagashio K.. Quantitative determination of contradictory bandgap values of bulk PdSe₂ from electrical transport properties. Adv. Funct. Mater., 32, 2108061(2022).

[29] Wu J.-H., Ma H., Zhong C.-Y. et al. Waveguide-integrated PdSe₂ photodetector over a broad infrared wavelength range. Nano Lett., 22, 6816-6824(2022).

[30] Jian J.-L., Wu J.-H., Zhong C.-Y. et al. High-speed compact plasmonic-PdSe₂ waveguide-integrated photodetector. ACS Photonics, 10, 3494-3501(2023).

[31] Shi Z.-T., Qi X.-Q., Zhang Z.-K. et al. Facile synthesis of ZnO/PdSe₂ core-shell heterojunction for efficient photodetector application. Chem. Eng. J., 413, 127484(2021).

[32] Pi L.-J., Hu C.-G., Shen W.-F. et al. Highly in‐plane anisotropic 2D PdSe₂ for polarized photodetection with orientation selectivity. Adv. Funct. Mater., 31, 2006774(2021).

[33] Guo Q.-S., Pospischil A., Bhuiyan M. et al. Black phosphorus mid-infrared photodetectors with high gain. Nano Lett., 16, 4648-4655(2016).

[34] Zhang X.-R., Dai M.-J., Deng W.-J., Zhang Y.-Z., Wang Q.-J.. A broadband. self-powered, and polarization-sensitive PdSe2 photodetector based on asymmetric van der Waals contacts, Nanophotonics, 12, 607-618(2023).

[35] Zhong J.-H., Wu B., Madoune Y., Wang Y.-P., Liu Z.-W., Liu Y.-P.. PdSe₂/MoSe₂ vertical heterojunction for self-powered photodetector with high performance. Nano Res., 15, 2489-2496(2022).

[36] Zhang H., Chang B., Li Z.-Y. et al. Coherent optical frequency combs: from principles to applications. Journal of Electronic Science and Technology, 20, 100157(2022).

[37] Yin C.-D., He S.-X., Fan X.-F., Xiao Y.-K., Zhao L.-C., Gao L.-M.. Gate-modulated and polarization-sensitive photodetector based on the MoS₂/PdSe₂ out-of-plane van der Waals heterostructure. Adv. Opt. Mater., 12, 2401122(2024).

[38] Wang P., Li Z., Xia X. et al. Anisotropic Te/PdSe₂ van der Waals heterojunction for self‐powered broadband and polarization‐sensitive photodetection. Small, 20, 2401216(2024).

[39] Ma Y.-F., Wang Y.-M., Wen J. et al. Review of roll-to-roll fabrication techniques for colloidal quantum dot solar cells. Journal of Electronic Science and Technology, 21, 100189(2023).

[40] [40] D. Wu, C. Jia, F. Shi, et al., Mixeddimensional PdSe2SiNWA heterostructure based photovoltaic detects f selfdriven, broadb photodetection, infrared imaging huity sensing, Journal of Materials Chemistry A, 8 (2020) 3632–3642.

[41] [41] D. Wu, M. Xu, L. Zeng, et al, In situ fabrication of PdSe2GaN Schottky junction f polarizationsensitive ultraviolet photodetection with high dichroic ratio, ACS Nano 16 (2022) 5545–5555.

[42] Yang Y.-S., Liu S.C., Wang X. et al. Polarization‐sensitive ultraviolet photodetection of anisotropic 2D GeS₂. Adv. Funct. Mater., 29, 1900411(2019).

[43] Bullock J., Amani M., Cho J. et al. Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature. Nat. Photonics., 12, 601-607(2018).

[44] Xiang D., Han C., Hu Z.-H. et al. Surface transfer doping‐induced. high‐performance graphene/silicon Schottky junction‐based, self‐powered photodetector, Small, 11, 4829-4836(2015).

[45] Ezhilmaran B., Patra A., Benny S. et al. Recent developments in the photodetector applications of Schottky diodes based on 2D materials. J. Mater. Chem. C, 9, 6122-6150(2021).

[46] Chen E., Xu W., Chen J., Warner J.H., layered noble metal dichalcogenides (Pt 2D, Pd, Se. S) for electronics and energy applications. Mater. Today Adv., 7, 100076(2020).

[47] [47] W. Ahmad, Y. Wang, J. Kazmi, U. Younis, et al., Janus 2D transition metal dichalcogenides: research progress, optical mechanism future prospects f optoelectronic devices, Laser & Photonics Rev. (2024) 2400341.