Chinese Journal of Lasers, Volume. 52, Issue 5, 0501011(2025)
Development and Challenges of GaN‐Based Vertical‐Cavity Surface‐Emitting Lasers (Invited)
Figures & Tables(19)
![Schematic diagrams of two different structures of GaN-based VCSELs[47]. (a) VCSEL with hybrid DBR structure; (b) VCSEL with double dielectric DBR structure fabricated by substrate transfer technique; (c) VCSEL with double dielectric DBR structure fabricated by epitaxial lateral overgrowth technique](/Images/icon/loading.gif){kind=icon}
Fig. 1. Schematic diagrams of two different structures of GaN-based VCSELs[47]. (a) VCSEL with hybrid DBR structure; (b) VCSEL with double dielectric DBR structure fabricated by substrate transfer technique; (c) VCSEL with double dielectric DBR structure fabricated by epitaxial lateral overgrowth technique
Fig. 2. GaN-based VCSEL with NCW structure[54]. (a) Device structure; (b) current-power and current-voltage characteristic curves of device
Fig. 3. Structure of GaN-based VCSEL with InGaN quantum dot active region[67]. (a) Device structure diagram; (b) cross section image of device
Fig. 4. Laser emission performance of GaN-based VCSEL with InGaN quantum dot active region[67]. (a) Electroluminescence spectra; (b) normalized electroluminescence spectra; (c) electroluminescence intensity versus current
Fig. 5. Fabrication of double dielectric DBR GaN-based VCSEL by epitaxial lateral overgrowth technique[70].. (a) Device structure diagram; (b) cross-section SEM image of device
Fig. 6. Curved mirror GaN-based VCSEL[71]. (a) Device structure diagram; (b) cross-sectional SEM image of device
Fig. 7. Curved mirror GaN-based VCSEL[39]. (a) Injection current-output intensity curves; (b) current injection spectra (current injection aperture of 6 µm)
Fig. 8. Curved mirror GaN-based VCSEL with current injection aperture of 6 µm[39]. (a) Near-field pattern when injection current is 1.1Ith; (b)(c) near-field mode distributions
Fig. 9. GaN-based VCSEL with curved mirror structure [71] (current injection aperture of 3 µm). (a) Current-voltage and current-power curves under current injection; (b) emission spectrum at current injection of 0.3 mA
Fig. 10. Curved lens fabricated based on GaN[73]. (a) Laser confocal scanning image of curved lens; (b) cross-sectional profiles of curved lens in different directions
Fig. 11. White light formed by overlap of red, blue, and green beams based on VCSEL[73]
Fig. 12. GaN-based VCSEL with top-side curved mirror structure[40]. (a) Device structure diagram; (b) cross-section SEM image of device
Fig. 13. Simulated beam waist size in curved mirror versus cavity length and curvature radius[78]. (a) Resonant cavity length;
Fig. 14. Simulated longitudinal mode spacing versus resonant cavity length (λ=445 nm, dn/dλ=-0.001, n=2.45)[78]
Fig. 16. Curved lens fabricated based on GaN[39]. (a) Laser confocal microscope image; (b) cross-sectional profile image; (c) atomic force microscope image of top curved surface; (d) cross-sectional transmission electron microscope image
Table 1. Performance summary of GaN-based VCSELs with hybrid DBR structures
View tableTable 1. Performance summary of GaN-based VCSELs with hybrid DBR structures
Ref. Bottom DBR Top DBR Operation condition Aperture /
μm
Wavelength /
nm
Ith /
mA
Jth /
（kA/cm2）
Pmax /
mW
SE /
（W/A）
WPE /
%
［ 18 ］AlN/GaN×
29
Ta2O5/SiO2×
8
77 K， continuous wave 10 462.8 1.4 1.8 ［ 48 ］AlN/GaN×
29
Ta2O5/SiO2×
10
Room temperature， continuous wave 10 412 9.7 12.4 ［ 27 ］Al0.8In0.2N/GaN×41.5 TiO2/SiO2×
7
Room temperature， pulsed laser 8 420 70 140 ［ 49 ］Al0.82In0.18N/GaN×40 Nb2O5/SiO2×
8
Room temperature， continuous wave 8 409.9 8.3 16.5 ［ 30 ］AlInN/GaN×
40
Nb2O5/SiO2×
8
Room temperature， continuous wave 8 413.5 7.5 0.045 ［ 50 ］Al0.82In0.18N/GaN×46
（n-type conducting）
Nb2O5/SiO2×
8
Room temperature， continuous wave 8 405.1 2.6 5.2 ［ 51 ］AlInN/GaN×
42
Nb2O5/SiO2×
10.5
Room temperature， continuous wave 8 441 3 6 6 0.87
（pulsed laser）
［ 52 ］AlInN/GaN×
41
Nb2O5/SiO2×
10.5
From 20 ℃ to room temperature， continuous wave 8 440.1 4.5 9.0 15.7 0.87 8.9 ［ 53 ］AlInN/GaN×
41
Nb2O5/SiO2×
10.5
From 20 ℃ to room temperature， continuous wave 6 447 140 1190 4.2 ［ 54 ］AlInN/GaN×
40
Nb2O5/SiO2×
10.5
From 20 ℃ to room temperature， continuous wave 7/3 450 8.2/1.4 23.7/5 1.2/0.7 10/9.9 ［ 57 ］Al0.8In0.2N/GaN Nb2O5/SiO2 Room temperature， continuous wave 4/5 442.3/
514.9
0.4/2.8 3.2/14.3 >2.5/
>1.5
13.6/13.7 ［ 56 ］AlInN/GaN×
40
Nb2O5/SiO2×
10
Room temperature， continuous wave 8/5 417.7 ~5/2.5 13.1/
>12
15/21.3
Table 2. Performance summary of GaN-based VCSELs with double dielectric DBR structures
View tableTable 2. Performance summary of GaN-based VCSELs with double dielectric DBR structures
Ref. Bottom DBR Top DBR Operation condition Aperture /
μm
Wavelength /
nm
Ith /
mA
Jth /
（kA/cm2）
Pmax /
mW
SE /
（W/A）
WPE /
%
［ 61 ］SiO2/Nb2O5×
11.5
SiO2/Nb2O5×
7
Room temperature， continuous wave 8 414 7 13.9 0.14 ［ 31 ］SiO2/Nb2O5×
11.5
SiO2/Nb2O5×
7
Room temperature， continuous wave 8 420 8 0.62 ［ 62 ］SiO2/Nb2O5×
11.5
SiO2/Nb2O5×
7
Room temperature， continuous wave/
pulsed laser
8/10 451/503 1.5/22 3.28 0.7/0.8 ［ 63 ］SiO2/Ta2O5×
13
SiO2/Ta2O5×
10
Room temperature， pulsed laser 10 411.9 80 0.0195 ［ 26 ］ZrO2/SiO2×
17.5
ZrO2/SiO2×
14
Room temperature， continuous wave 10 422 0.93 1.2 ［ 64 ］TiO2/SiO2×
12.5
TiO2/SiO2×
11.5
Room temperature， continuous wave 10 560.4 0.61 0.78 ［ 65 ］TiO2/SiO2×
12.5
TiO2/SiO2×
11.5
Room temperature， continuous wave 10 491.8/565.7/
560.4
0.52/0.65/
0.61
0.66/0.83/
0.78
6.2/7.64/
11.82
［ 66 ］Ti3O5/SiO2×
13.5
Ti3O5/SiO2×
11
Room temperature， continuous wave 15 493 32 18 0.178 ［ 68 ］SiO2/Ta2O5×
12
TiO2-HCG Room temperature， pulsed laser 10 400 25 31.8 ［ 67 ］TiO2/SiO2×
12.5
TiO2/SiO2×
8
Room temperature， continuous wave 7 524 0.02 0.05197
Table 3. Performance summary of GaN-based VCSEL devices with curved mirror structures
View tableTable 3. Performance summary of GaN-based VCSEL devices with curved mirror structures
Ref. Bottom
DBR
Top DBR Operation
condition
Aperture /
μm
Cavity
length /µm
Radius of curvature /
µm
Wavelength /
nm
Jth /
（kA/cm2）
Pmax /
mW
Crystal orientation of GaN WPE /
%
［ 39 ］Ta2O5/SiO2×14 Ta2O5/SiO2×11.5 Room temperature，
pulsed laser
8/6 28.3 74 441‒445 141/139 ｛000-1｝ ［ 71 ］Ta2O5/SiO2×14 Ta2O5/SiO2×11.5 Room temperature，
continuous wave
3 25.6 29.1 445.3 3.5 >0.3 ｛000-1｝ ［ 72 ］Ta2O5/SiO2×14 Ta2O5/SiO2×7 From 20 ℃ to room
temperature，
continuous wave
4/8 22 51/82 443.2 7.1/15.4 ｛000-1｝ 9.2% ［ 76 ］Ta2O5/SiO2×14 Ta2O5/SiO2×11 Room temperature，
continuous wave
4 23 52 451.8 4.5 ｛000-1｝ ［ 73 ］Ta2O5/SiO2×14 Ta2O5/SiO2×11.5 Room temperature，
continuous wave
4 18.6 41.3/
42.4
515.2 14.4 ｛20-21｝ <0.1 ［ 74 ］Ta2O5/SiO2×14 Ta2O5/SiO2×7.5 Room temperature，
continuous wave
3 29 33.5 442.1 7.6 ｛000-1｝ 13.4 ［ 40 ］NP DBR Ta2O5/SiO2×16 Room temperature，
pulsed laser/continuous wave
9 60.5λ 31 411 6.6/7.3 0.29/0.13 ｛10-10｝ ［ 75 ］NP DBR Ta2O5/SiO2×16 Room temperature，
continuous wave
10 65λ 120 404.5 14 0.37 ｛10-10｝
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Lei Shi, Tao Yang, Yachao Wang, Lilong Ma, Leiying Ying, Yang Mei, Baoping Zhang. Development and Challenges of GaN‐Based Vertical‐Cavity Surface‐Emitting Lasers (Invited)[J]. Chinese Journal of Lasers, 2025, 52(5): 0501011
Paper Information
Category: laser devices and laser physics
Received: Jul. 19, 2024
Accepted: Oct. 22, 2024
Published Online: Mar. 8, 2025
The Author Email: Mei Yang (meiyang@xmu.edu.cn), Zhang Baoping (bzhang@xmu.edu.cn)
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