Fig. 1. Schematic diagram of Micro-LEDs Structure (adapted from Ref.[1])

Fig. 2. Schematic diagram of the InGaN/GaN-based blue light-emitting-diode used for the simulation and the analysis of the efficiency (adapted from Ref.[35])

Fig. 3. Cross-sectional scanning electron microscopy (SEM) image of ITO layer after exposing to ICP etch ^[62]

Fig. 4. Extracted coefficients A (a) and C (b) plotted versus LED size^[53]

Fig. 5. Schematic diagrams for (a) LED without sidewall damages and (b) LED with sidewall damages; (c) the current-voltage characteristics in semi-log scale for LEDs; (d) changes in carrier concentration profiles near the P-region for LED (adapted from Ref. [42])

Fig. 6. (a) Electroluminescence images of Micro-LEDs at 1 A/cm²; (b), (c) variation of EQE with injection current density for different chip sizes (adapted from Ref.[62])

Fig. 7. Schematic diagram of Micro-LED surface changes after ion implantation. (a) Changes in surface chemical structure; (b) atomic alignment, surface repair and cavity defect filling; (c) passivation layer in GaN^[70]