[2] [2] Yejing D, Xingfu W, Wenbo P, et al. Largely Improved Near-Infrared Silicon-Photosensing by the Piezo-Phototronic Effect［J］. ACS nano,2017,11(7):7118—7125.

[6] [6] Huang Z, Zhao L, Li T, et al. Study on the effect of melt flow behavior on the uniformity of phosphorus doping during the growth of large-size n-type monocrystalline silicon by Czochralski method［J］. Materials Science in Semiconductor Processing,2024,175:108261.

[8] [8] Sueoka K, Kamiyama E, Vanhellemont J, et al. Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon［J］. Physica Status Solidi (b),2014,251(11):2159—2168.

[9] [9] Zhang J, Ren J C, Liu D. Effect of crucible rotation and crystal rotation on the oxygen distribution at the solid-liquid interface during the growth of Czochralski monocrystalline silicon under superconducting horizontal magnetic field［J］. Results in Physics,2019,13:102127.

[11] [11] Misiuk A. Effect of stress on creation of defects in annealed Czochralski grown silicon［J］. Physica Status Solidi a-Applications and Materials Science,1999,171(1):191—196.