Chinese Journal of Lasers, Volume. 25, Issue 1, 1(1998)

Theoretical Calculation of Gain and Threshold Current Density for InGaN Quantum Well Lasers

[in Chinese], [in Chinese], and [in Chinese]
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    References(7)

    [1] [1] Shuji Nakamura.A bright future for blue/green LEDs. IEEE Circuits & Devices, May 1995,19

    [2] [2] Rpbert A. Metzger. Nicha demonstrates the first nitride laser. Compound Semiconductor, 1996, 2(1): 7~8

    [3] [3] W. Fang, S. L. Chuang. Theoretical prediction of GaN lasing and temperature sensitivity. Appl. Phys. Lett., 1995, 67(6):751~753

    [4] [4] H. C. Casey, M. B. Panish. Heterostructure Lasers. Academic Press,1978,149

    [5] [5] James H. Edgar. Propertiesof Group Ⅲ Nitrides. London: INSPEC, IEE, 1994. 117, 231

    [6] [6] Shuji Nakamura, Takashi Mukai, Masayuki Senoh et al.. InxGa(1-x)NInyGa(1-y)N superlattices grown on GaN films. J. Appl. Phys., 1993, 74(6): 3911~3915

    [7] [7] P. W. A. McIlroy, Atsushi Kurobe, Yutaka Uematsu. Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers. IEEE J. Quant. Electron., 1985, QE-21(12): 1958~1963

    CLP Journals

    [1] Hua Lingling, Song Yanrong, Zhang Peng, Zhang Xiao, Guo Kai. Study on the Gain Characteristics of Optically Pumped Semiconductor Laser[J]. Acta Optica Sinica, 2010, 30(6): 1702

    [2] Hua Lingling, Yang Yang, Song Yanrong, Zhang Peng. Numerical Simulation of the Gain Characteristics of Optically Pumped Vertical External Cavity Surface Emitting Lasers[J]. Chinese Journal of Lasers, 2012, 39(s1): 102003

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    [in Chinese], [in Chinese], [in Chinese]. Theoretical Calculation of Gain and Threshold Current Density for InGaN Quantum Well Lasers[J]. Chinese Journal of Lasers, 1998, 25(1): 1

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    Paper Information

    Category: Laser physics

    Received: Nov. 8, 1996

    Accepted: --

    Published Online: Oct. 18, 2006

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