Chinese Journal of Quantum Electronics, Volume. 42, Issue 2, 229(2025)

Performance of radio frequency source based on electronic tube oscillation circuit for ion traps

XU Huaxuan1、#, AO Zhiyuan2,3、#, LI Lin2,3, LI Zi2,3、*, HE Shengguo2、**, and TONG Xin2
Author Affiliations
  • 1School of Physics and Technology, Wuhan University, Wuhan 430072, China
  • 2State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Innovation Academy for Precision Measurement Science and Technology, Chinese Academy of Sciences, Wuhan 430071, China
  • 3University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(8)
    Circuit diagram of the RF source. (a) LC resonance circuit; (b)(c) Feedback networks; (d) Amplitude adjustment module
    Photograph of the RF source
    Schematic of the segmented linear ion trap. (a) Radial cross-sectional dimensions; (b) Axial dimensions
    Performance of the RF source. (a) Output peak to peak voltage Vpp of the two RF electric fields and the corresponding harmonic distortion at different working frequencies of the RF source device; (b) Relationship between Vpp andDC input voltage at 2.2, 3.6, 4.0 MHz
    Allan derivations of the parameters. (a) Frequency; (b) Phase difference; (c) Vpp . The dashed line in each subfigure represents a reference line with a slope of -0.5
    Fluorescence images of calcium ion Coulomb crystals under different output RF voltages from RF source. (a)-(e) correspond the conditions with RF frequency of 2 MHz and Vpp of 70, 100, 130, 160, 190 V, respectively; (f)-(j) correspond the conditions with RF frequency of 3 MHz and Vpp of 120, 150, 180, 210, 240 V, respectively
    • Table 1. Parameters of electronic components of the RF source

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      Table 1. Parameters of electronic components of the RF source

      LabelTypeParameters
      Dual-beam tetrodeFU-19Anode voltage<750 V, filament voltage is 12.6 V
      R1, R2, R3, R4, R8, R9Metal firm resistance10 MΩ at 1000 V
      R5, R6, R10, R11Metal firm resistance150 kΩ at 1000 V
      R7Metal firm resistance15 kΩ at 1000 V
      C1, C2, C4, C9, C10Ceramic capacitor10 nF at 3000 V
      C3Adjustable air capacitorAbout 100-800 pF at 2000 V
      C5, C6, C7, C11, C12, C13Ceramic capacitor68 pF at 3000 V
      C8, C14Ceramic capacitor33 pF at 3000 V
      L1, L2Self-fabricated9.75 μH
      L3I-shaped inductance100 μH
    • Table 2. The voltage outputs (Vpp) of both channels at different resonance frequencies of the RF source

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      Table 2. The voltage outputs (Vpp) of both channels at different resonance frequencies of the RF source

      Frequency / MHzRF1 output voltage / VRF2 output voltage / VDifference between RF1 and RF2 / %
      2.2596.9 ± 1.4590.3 ± 1.31.11
      3.6614.2 ± 1.5605.5 ± 1.71.43
      4.0594.6 ± 1.9581.0 ± 1.62.31
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    Huaxuan XU, Zhiyuan AO, Lin LI, Zi LI, Shengguo HE, Xin TONG. Performance of radio frequency source based on electronic tube oscillation circuit for ion traps[J]. Chinese Journal of Quantum Electronics, 2025, 42(2): 229

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    Paper Information

    Category:

    Received: Aug. 3, 2023

    Accepted: --

    Published Online: Apr. 1, 2025

    The Author Email: Zi LI (lizi@wipm.ac.cn), Shengguo HE (hesg@wipm.ac.cn)

    DOI:10.3969/j.issn.1007-5461.2025.02.008

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