Influence of the strain on the energy levels of semiconductor quantum dots

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Optics Letters, Volume. 3, Issue 0s, 244(2005)

[in Chinese]^1,2, [in Chinese]^1,2, [in Chinese]^1,2, and [in Chinese]^1,2

Author Affiliations

¹School of Science, Beijing University of Posts and Telecommunications, Beijing 100876

²Key Laboratory of Communication Lightwave Technologies, Ministry of Education, Beijing 100876

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References(5)

[1] [1] M. Gtundmann, O. Stier, and D. Bimgberg, Phys. Rev. B 52, 11969 (1995).

[2] [2] R. Mervyn and P. A. Maksym, Phys. Rev. B 68, 235308 (2003).

[3] [3] T. Saito, J. N. Schulman, and Y. ArakAwa, Phys. Rev. B 57, 13016 (1998).

[4] [4] M. Califano and P. Harrison, J. Appl. Phys. 91, 389 (2002).

[5] [5] H. Yang, Z. Yu, Y. Liu, and Y. Huang, J. Synthetic Crystals (in Chinese) 33, 531 (2004).

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], "Influence of the strain on the energy levels of semiconductor quantum dots," Chin. Opt. Lett. 3, 244 (2005)

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Paper Information

Received: --

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Published Online: Mar. 5, 2007

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology