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Chinese Journal of Lasers, Volume. 27, Issue 3, 257(2000)

Infrared Upconversion Efficiency of Electron-trapping Thin Film CaS∶Eu, Sm

[in Chinese]1, [in Chinese]2, [in Chinese]2, [in Chinese]2, [in Chinese]2, [in Chinese]1, and [in Chinese]2
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    [1] [1] J. Lindmayer. A new erasable optical memory. Solid State Technology, 1988, 31(8):135～138

    [2] [2] S. Jutamulia, G. M. Storti, W. Seiderman et al.. Use of electron-trapping materials in optical signal processing. ⅠⅤ: Parallel incoherent image subtraction. Appl. Opt., 1993, 32(5):743～745

    [3] [3] Z. Wen, N. H. Farhat, Z. J. Zhao. Dynamics of electron-trapping materials for use in optoelectronic neurocomputing. Appl. Opt., 1993, 32(35):7251～7265

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Infrared Upconversion Efficiency of Electron-trapping Thin Film CaS∶Eu, Sm[J]. Chinese Journal of Lasers, 2000, 27(3): 257

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    Paper Information

    Category: materials and thin films

    Received: Sep. 3, 1998

    Accepted: --

    Published Online: Aug. 9, 2006

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology