Ultrathin oxide controlled photocurrent generation through a metal–insulator–semiconductor heterojunction

Ning Liu; Xiaohong Yan; Long Gao; Sergey Beloshapkin; Christophe Silien; Hong Wei

doi:10.1364/PRJ.450399

Photonics Research, Volume. 10, Issue 8, 1996(2022)

Ultrathin oxide controlled photocurrent generation through a metal–insulator–semiconductor heterojunction

Ning Liu^1,2,5、*, Xiaohong Yan^3,4, Long Gao³, Sergey Beloshapkin², Christophe Silien^1,2, and Hong Wei^3,6、*

Author Affiliations

¹Department of Physics, University of Limerick, Limerick, Ireland

²Bernal Institute, University of Limerick, Limerick, Ireland

³Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

⁴School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China

⁵e-mail: ning.liu@ul.ie

⁶e-mail: weihong@iphy.ac.cn

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Ning Liu, Xiaohong Yan, Long Gao, Sergey Beloshapkin, Christophe Silien, Hong Wei, "Ultrathin oxide controlled photocurrent generation through a metal–insulator–semiconductor heterojunction," Photonics Res. 10, 1996 (2022)

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Paper Information

Category: Optoelectronics

Received: Dec. 3, 2021

Accepted: May. 24, 2022

Published Online: Jul. 29, 2022

The Author Email: Ning Liu (ning.liu@ul.ie), Hong Wei (weihong@iphy.ac.cn)

DOI:10.1364/PRJ.450399

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