Acta Photonica Sinica, Volume. 53, Issue 7, 0753308(2024)
Effect of Atomic Layer Deposition Al2O3 Passivation on the Luminescence Properties of InAs/InGaAsSb Type-II Superlattices
Fig. 1. Preparation of InAs / InGaAsSb superlattice mesa structure and ALD-Al2O3 passivation process
Fig. 2. X-ray diffraction patterns of InAs/InGaAsSb superlattice materials
Fig. 4. X-ray photoelectron spectroscopy of As 3d element before and after etching passivation
Fig. 5. Five days spectral comparison between untreated and passivated samples
Fig. 6. Temperature dependent spectra of untreated and passivated samples
Fig. 7. Fitting diagram of power dependence before and after passivation
Fig. 8. Temperature dependence spectra of untreated and passivated samples
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Chao XIANG, Dengkui WANG, Xuan FANG, Dan FANG, Hao YAN, Jinhua LI, Xiaohua WANG, Peng DU. Effect of Atomic Layer Deposition Al2O3 Passivation on the Luminescence Properties of InAs/InGaAsSb Type-II Superlattices[J]. Acta Photonica Sinica, 2024, 53(7): 0753308
Category: Special Issue for Photodetectors
Received: Feb. 29, 2024
Accepted: Apr. 7, 2024
Published Online: Aug. 12, 2024
The Author Email: Dengkui WANG (wangdk@cust.edu.cn)