Acta Photonica Sinica, Volume. 53, Issue 7, 0753308(2024)

Effect of Atomic Layer Deposition Al2O3 Passivation on the Luminescence Properties of InAs/InGaAsSb Type-II Superlattices

Chao XIANG1, Dengkui WANG1、*, Xuan FANG1, Dan FANG1, Hao YAN1, Jinhua LI1, Xiaohua WANG1, and Peng DU2
Author Affiliations
  • 1State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
  • 2College of Electrical Engineering, University of South China, Hengyang 421000, China
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    Figures & Tables(9)
    Preparation of InAs / InGaAsSb superlattice mesa structure and ALD-Al2O3 passivation process
    X-ray diffraction patterns of InAs/InGaAsSb superlattice materials
    AFM scanning images before and after passivation
    X-ray photoelectron spectroscopy of As 3d element before and after etching passivation
    Five days spectral comparison between untreated and passivated samples
    Temperature dependent spectra of untreated and passivated samples
    Fitting diagram of power dependence before and after passivation
    Temperature dependence spectra of untreated and passivated samples
    Fitting values of untreated and passivated samples
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    Chao XIANG, Dengkui WANG, Xuan FANG, Dan FANG, Hao YAN, Jinhua LI, Xiaohua WANG, Peng DU. Effect of Atomic Layer Deposition Al2O3 Passivation on the Luminescence Properties of InAs/InGaAsSb Type-II Superlattices[J]. Acta Photonica Sinica, 2024, 53(7): 0753308

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    Paper Information

    Category: Special Issue for Photodetectors

    Received: Feb. 29, 2024

    Accepted: Apr. 7, 2024

    Published Online: Aug. 12, 2024

    The Author Email: Dengkui WANG (wangdk@cust.edu.cn)

    DOI:10.3788/gzxb20245307.0753308

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