[1] [1] Yankov P. Cr4+:YAG Q-switching of Nd:host laser oscillators. J. Phys. (D): Appl. Phys., 1994, 27(6):1118～1120

[3] [3] Shimony Y, Burshtein Z, Kalisky Y. Cr4+:YAG as passive Q-switched and brewster plate in a Nd:YAG laser. IEEE J. Quant. Electron., 1995, QE-31(10):1738～1741

[4] [4] Corno A D, Gabetta G, Reali G C et al.. Active-passive mode-locked Nd:YAG laser with passive negative feedback. Opt. Lett., 1990, 15(13):734～736

[5] [5] Kajara T T, Gaeta A L. Q switching of a diode-pumped Nd:YAG laser with GaAs. Opt. Lett., 1996, 21(16):1244～1246

[6] [6] Smirl A L, Valley G C, Bohnert K M et al.. Picosecond photorefractive and free-carrier transient energy transfer in GaAs at 1 μm. IEEE J. Quantum Electron., 1988, QE-24(2):289～303

[7] [7] Manasreh M U, Mitchel W C, Fischer D W. Observation of the second energy level of the EL2 defect in GaAs by the infrared absorption technique. Appl. Phys. Lett., 1989, 55(9):864～866

[8] [8] Valley G C, Smirl A L. Theory of transient energy transfer in gallium arsenide. IEEE J. Quant. Electron., 1988, QE-24(2):304～310

[9] [9] Silverberg P, Omling P, Samnelson L. Hole photoionization cross sections of EL2 in GaAs. J. Appl. Phys., 1988, 52(20):1689～1691

[10] [10] Zhang Zhuhong, Qian Liejia, Fan Dianyuan et al.. Gallium arsenide: A new material to accomplish passively mode-locked Nd:YAG laser. Appl. Phys. Lett., 1992, 60(4):419～421

[11] [11] Degnan J J. Optimization of passively Q-switched laser. IEEE J. Quant. Electron., 1995, QE-31(11):1890～1901

[13] [13] Kuo Y K, Huang M F, Birnbaum M. Tunable Cr:YSO Q-switched Cr:LiCAF laser. IEEE J. Quant. Electron., 1995, QE-31(4):657～663

[14] [14] Boggess T F, Smirl A L, Moss S C et al.. Optical limiting in GaAs. IEEE J. Quant. Electron., 1985, QE-21(5):488～493

[15] [15] Blakemore J S. Semiconductor and other major properties of Gallium arsenide. J. Appl. Phys., 1982, 53(10):R123～R181