Optoelectronic Technology, Volume. 43, Issue 4, 293(2023)
Thin Film Transistor Based on Graphene Heterojunction Regulated by Femtosecond Laser
Fig. 1. Schematic of femtosecond laser system processing graphene oxide film
Fig. 4. Hysteresis curves of GHTFT under different laser power density
Fig. 5. Electrical characteristics of GHTFT at a laser power density of 1.03 kW/cm2
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Yanxue HAO, Gengxu CHEN, Tailiang GUO. Thin Film Transistor Based on Graphene Heterojunction Regulated by Femtosecond Laser[J]. Optoelectronic Technology, 2023, 43(4): 293
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Received: Mar. 16, 2023
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Published Online: Mar. 21, 2024
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