Optoelectronic Technology, Volume. 43, Issue 4, 293(2023)

Thin Film Transistor Based on Graphene Heterojunction Regulated by Femtosecond Laser

Yanxue HAO, Gengxu CHEN, and Tailiang GUO
Author Affiliations
  • College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108,CHN
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    Figures & Tables(6)
    Schematic of femtosecond laser system processing graphene oxide film
    Chemical analysis of reduced graphene oxide thin film
    The characterization of GHTFT
    Hysteresis curves of GHTFT under different laser power density
    Electrical characteristics of GHTFT at a laser power density of 1.03 kW/cm2
    Schematic of working principle of GHTFT
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    Yanxue HAO, Gengxu CHEN, Tailiang GUO. Thin Film Transistor Based on Graphene Heterojunction Regulated by Femtosecond Laser[J]. Optoelectronic Technology, 2023, 43(4): 293

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    Paper Information

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    Received: Mar. 16, 2023

    Accepted: --

    Published Online: Mar. 21, 2024

    The Author Email:

    DOI:10.19453/j.cnki.1005-488x.2023.04.003

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