Room temperature III–V nanolasers with distributed Bragg reflectors epitaxially grown on (001) silicon-on-insulators

Yu Han; Wai Kit Ng; Ying Xue; Kam Sing Wong; Kei May Lau

doi:10.1364/PRJ.7.001081

Photonics Research, Volume. 7, Issue 9, 1081(2019)

Room temperature III–V nanolasers with distributed Bragg reflectors epitaxially grown on (001) silicon-on-insulators

Yu Han^1、†, Wai Kit Ng^2、†, Ying Xue¹, Kam Sing Wong^2,3、*, and Kei May Lau^1,4、*

¹Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

²Department of Physics and William Mong Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

³e-mail: phkwong@ust.hk

⁴e-mail: eekmlau@ust.hk

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Yu Han, Wai Kit Ng, Ying Xue, Kam Sing Wong, Kei May Lau, "Room temperature III–V nanolasers with distributed Bragg reflectors epitaxially grown on (001) silicon-on-insulators," Photonics Res. 7, 1081 (2019)

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Paper Information

Category: Lasers and Laser Optics

Received: May. 31, 2019

Accepted: Jul. 30, 2019

Published Online: Aug. 26, 2019

The Author Email: Kam Sing Wong (phkwong@ust.hk), Kei May Lau (eekmlau@ust.hk)

DOI:10.1364/PRJ.7.001081

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology