Preparation and Properties of LowAbsorption Sapphire Crystal by Modified Kyropoulos Method

ZHAO Peng; SONG Jianjun; ZHANG Wei; CHENG Gang; ZHANG Lisheng; FU Chunlei; SHI Gang; HUANG Cunxin

Journal of Synthetic Crystals, Volume. 52, Issue 12, 2203(2023)

ZHAO Peng^1,2、*, SONG Jianjun³, ZHANG Wei^1,2, CHENG Gang^1,2, ZHANG Lisheng^1,2, FU Chunlei³, SHI Gang³, and HUANG Cunxin^1,2

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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References(5)

[1] [1] AKSELROD M S, BRUNI F J. Modern trends in crystal growth and new applications of sapphire[J]. Journal of Crystal Growth, 2012, 360: 134145.

[7] [7] DEMINA S E, BYSTROVA E N, POSTOLOV V S, et al. Use of numerical simulation for growing highquality sapphire crystals by the Kyropoulos method［J］. Journal of Crystal Growth, 2008, 310(7/8/9): 14431447.

[10] [10] YANG X B, LI H J, XU J, et al. Growth of rplane sapphire by edgedefined filmfed growth and temperature gradient technique［J］. Journal of the Chinese Ceramic Society, 2008, 36(5): 678683.

[11] [11] BUNOIU O, NICOAR I, DUFFAR T. Solute distribution in shaped sapphire crystals obtained by EFG method［J］. Journal of Optoelectronics and Advanced Materials, 2005, 7: 615618.

[12] [12] BORODIN A V, BORODIN V A, ZHDANOV A V. Simulation of the pressure distribution in the melt for sapphire ribbon growth by the Stepanov (EFG) technique［J］. Journal of Crystal Growth, 1999, 198/199: 220226.

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ZHAO Peng, SONG Jianjun, ZHANG Wei, CHENG Gang, ZHANG Lisheng, FU Chunlei, SHI Gang, HUANG Cunxin. Preparation and Properties of LowAbsorption Sapphire Crystal by Modified Kyropoulos Method[J]. Journal of Synthetic Crystals, 2023, 52(12): 2203

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Paper Information

Category:

Received: Oct. 10, 2023

Accepted: --

Published Online: Jan. 3, 2024

The Author Email: Peng ZHAO (zhaopeng8903@163.com)

DOI:

CSTR:32186.14.

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology