Laser & Optoelectronics Progress, Volume. 59, Issue 21, 2100004(2022)

Application Progress of Silicon Photomultiplier in Radiation Detection

Xinjie Wu, Haifu Ye*, Jie Ai, and Yeping Zhang
Author Affiliations
  • Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621000, Sichuan, China
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    Figures & Tables(16)
    Key technology development history of SiPM[17-21]
    Schematic diagrams of the cross-section of new SiPM structures. (a) P-on-N structure[22]; (b) RGB- SiPM structure[27]; (c) EQR SiPM structure[29]
    Analysis diagram of three working modes of SPAD
    Schematic of SiPM. (a) Traditional SiPM structure; (b) SiPM circuit array structure
    DSiPM circuit structure model[39]
    Relationship network of main characteristic parameters of SiPM
    SiPM electrical test results under different light conditions[41]. (a) I-V characteristic curves ; (b) derivative distribution of I-V characteristic curves
    Function of overvoltage and PDE of SiPM produced by different manufacturers at wavelength of 410 nm (HPK, Ketek, FBK and SensL) [42]
    SiPM noise schematics. (a) Schematic diagram of noise source; (b) noise waveform of SiPM[42-43]
    SiPM ASIC schematics [45]. (a) Voltage mode readout; (b) current mode readout
    Research status of SiPM. (a) Application of SiPM in various fields; (b) comparison of statistics of published literature based on SiPM and PMT in the field of radiation detection in the past 20 years
    Structure diagram of SiPM-based neutron scintillation detector[59]
    Typical TOF-PET cell structure diagram[65]
    Application of SiPM in biosensing fluorescence detection[69-70]
    • Table 1. List of SiPM products of some SiPM research institutions and well-known production companies in the world[31-36]

      View table

      Table 1. List of SiPM products of some SiPM research institutions and well-known production companies in the world[31-36]

      Model
      JoinbonJSP-TN3050-SMTAdvanSiDASD-RGB3S-PFirst sensorSiPM-NUV3S-SMDONSEMI(SENSL)C-seriesBROADCOMAFBR-S4N33C013HamamatsuS13360-3025PE
      Microcell size
      Gain
      Temperature dependence of VBR34.4 mV·℃-127 mV·℃-126 mV·℃-121.5 mV·℃-126 mV·℃-154 mV·℃-1
      Spectral range250-950 nm350-900 nm350-900 nm300-950 nm300-900 nm320-900 nm
      PDE32%@420 nm32.5%@550 nm43%@420 nm41%@420 nm54%@420 nm25%@420 nm
    • Table 2. ASIC front-end readout circuit summary

      View table

      Table 2. ASIC front-end readout circuit summary

      Reference464748495051525354
      ASICEASIROCSCGASTiCHRFlexToTTOFPET2KLauSkintex-7FSCACITIROC
      Number of channels32264166436166432
      Technology350 nm350 nm180 nm180 nm180 nm180 nm65 nm350 nm
      Power per channel<5 mW<3 mW3.5 mW3.6-7.2 mW3.3 mW3.89 mW2.1 mW
      Dynamic range160-320 pC200 fC-25 pC20 pC1500 pC200-800 pC160 fC-320 pC
      Time resolution50.2 ps10 ps30 ps200 ps422.3 ps
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    Xinjie Wu, Haifu Ye, Jie Ai, Yeping Zhang. Application Progress of Silicon Photomultiplier in Radiation Detection[J]. Laser & Optoelectronics Progress, 2022, 59(21): 2100004

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    Paper Information

    Category: Reviews

    Received: Mar. 14, 2022

    Accepted: Jun. 1, 2022

    Published Online: Oct. 24, 2022

    The Author Email: Haifu Ye (yehaifu@caep.cn)

    DOI:10.3788/LOP202259.2100004

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