Journal of Semiconductors, Volume. 40, Issue 1, 012805(2019)

Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga2O3

Jianjun Shi, Xiaochuan Xia, Qasim Abbas, Jun Liu, Heqiu Zhang, Yang Liu, and Hongwei Liang
Author Affiliations
  • School of Microelectronics, Dalian University of Technology, Dalian 116024, China
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    Figures & Tables(4)
    (Color online) I–V curves for as-prepared and 400 °C annealed samples. The insert is the schematic structure of the Mg/Au/β-Ga2O3 contact.
    (Color online) (a) Resistance of Mg/Au-β-Ga2O3 structure with two adjacent ohmic contacts versus the distance at different temperatures. (b) Contact resistance and sheet resistance of the ohmic contact Mg/Au-β-Ga2O3 versus measuring temperatures.
    (Color online) Specific contact resistance of the ohmic contact Mg/Au-β-Ga2O3 versus measuring temperatures.
    (Color online) The dependence of ln (ρcT) on 1/T graph about Mg/Au-β-Ga2O3 ohmic contact for the annealed sample, experimental data (point) and TE model fitting (line).
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    Jianjun Shi, Xiaochuan Xia, Qasim Abbas, Jun Liu, Heqiu Zhang, Yang Liu, Hongwei Liang. Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga2O3[J]. Journal of Semiconductors, 2019, 40(1): 012805

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    Paper Information

    Category: Articles

    Received: Aug. 3, 2018

    Accepted: --

    Published Online: Sep. 18, 2021

    The Author Email:

    DOI:10.1088/1674-4926/40/1/012805

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