Laser & Infrared, Volume. 55, Issue 3, 395(2025)

Study of p-on-n type HgCdTe little pixel detector

WANG Xin, LIU Shi-guang, ZHANG Yi, ZHAO Xu-hao, and WANG Jiao
Author Affiliations
  • North China Research Institute of Electro-Optics, Beijing 100015
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    References(7)

    [1] [1] Rogalski A. History of infrared detectors[J]. Opto-Electron. Rev, 2012, (3): 279-308.

    [2] [2] Mollard L, Destefanis G, Rothman J, et al. HgCdTe FPAs made by arsenicion implantation[J]. Infrared Technology and Applications, 2008, 6940: 69400F1-10.

    [3] [3] Vilela M F, Hogan J, Fennell B T, et al. Infinite-melt vertical liquid-phase epitaxy of HgCdTe from Hg solution: From VLWIR to SWIR[J]. Journal of Electronic Materials, 2022, 51: 4731-4741.

    [4] [4] Rogalski A, Antoszewski J, Faraone L. Third-generation infrared photodetector arrays[J]. Appl, Phys., 2009, 105: 091101.

    [6] [6] LEI W, Antoszewski J, Faraone L. Progress, challenges and opportunities for HgCdTe infrared materials and detectors[J]. Applied Physics Reviews, 2015, 2(4): 041303.

    [7] [7] Rogalski A, Martyniuk P, Kopytko M. Challenges of small-pixel infrared detectors: a review[J]. Reports on Progress in Physics, 2016, 79(4): 046501.

    [8] [8] Hess G T, Sanders T J. HgCdTe double-layer heterojunction detector device[J]. SPIE, 2000, 4028: 353-364.

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    WANG Xin, LIU Shi-guang, ZHANG Yi, ZHAO Xu-hao, WANG Jiao. Study of p-on-n type HgCdTe little pixel detector[J]. Laser & Infrared, 2025, 55(3): 395

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    Paper Information

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    Received: Aug. 23, 2024

    Accepted: Apr. 23, 2025

    Published Online: Apr. 23, 2025

    The Author Email:

    DOI:10.3969/j.issn.1001-5078.2025.03.011

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