Fig. 1. The model of the mask blank with different types of defects

Fig. 2. The basic setup of the dark field inspection system

Fig. 3. Normalized signal intensity of surface defects

Fig. 4. Angular distribution of the “far-field” scattering light intensity of a 2 nm diameter SiO₂ particle

Fig. 5. Normalized signal intensity for SiO₂ particles， ranging in diameter from 2~24 nm， using source wavelengths of 13.5 nm and 38 nm， calculated in 3D simulations

Fig. 6. Penetration depth of various wavelengths in the EUV mask blank

Fig. 7. Signal intensity for shallow defects with heights ranging from 1 to 20 nm and widths ranging from 10 to 100 nm

Fig. 8. Signal intensity at 13.5 nm and 38 nm wavelength for deep defects with height ranging from 1~30 nm and width ranging from 10~100 nm