[1] [1] M. Wutting, C. Steimer. Phase change materials: from material science to novel storage devices［J］. Appl. Phys. A, 2007, 87(3): 411～417

[2] [2] A. L. Lacaita, D. J. Wouters. Phase-change memories［J］. Phys. Stat. Sol. (a), 2008, 205(10): 2281～2297

[3] [3] S. R. Ovshinsky. Reversible electrical switching phenomena in disordered structures［J］. Phys. Rev. Lett., 1968, 21(20): 1450～1453

[4] [4] M. Wutting, N. Yamada. Phase change materials for rewriteable data storage［J］. Nat. Mater., 2007, 6: 824～832

[5] [5] M. Wuttig. Phase-change materials: towards a universal memory［J］. Nat. Mater., 2005, 4: 265～266

[6] [6] M. Wuttig, D. Lüsebrink, D. Wamwangi et al.. The role of vacancies and local distortions in the design of new phase change materials［J］. Nat. Mater., 2006, 6: 122～128

[7] [7] Z. M. Sun, J. Zhou, A. Blomqvist et al.. Fast crystallization of chalcogenide glass for rewritable memories［J］. Appl. Phys. Lett., 2008, 93(6): 061913

[8] [8] H. J. Borg, P. W. M. Blom, B. A. J. Jacobs et al.. AgInSbTe materials for high-speed phase-change recording［C］. SPIE, 1999, 3864: 191～193

[9] [9] J. Kalb, F. Spaepen, M. Wuttig. Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys［J］. Appl. Phys. Lett., 2004, 84(25): 5240～5242

[10] [10] H. Iwasaki, M. Harigaya, O. Nonoyama et al.. Completely erasable phase change optical disc II: Application of Ag-In-Sb-Te mixed-phase system for rewritable compact disc compatible with CD-velocity and double CD-velocity［J］. Jpn. J. Appl. Phys., 1993, 32(Part 1, No. 11B): 5241～5247

[11] [11] H. Tashiro, M. Harigaya, Y. Kageyama et al.. Structural analysis of Ag-In-Sb-Te phase-change material［J］. Jpn. J. Appl. Phys., 2002, 41(Part 1, No. 6A): 3758～3759

[12] [12] L. V. Pieterson, M. H. R. Lankhorst, M. V. Schijndel et al.. Phase-change recording materials with a growth-dominated crystallization mechanism: A materials overview［J］. J. Appl. Phys., 2005, 97(8): 083520

[13] [13] Huang Huan, Wang Yang, Gan Fuxi. Laser initialization study of novel SiSb phase change films［J］. Acta Optica Sinica, 2010, 30(4): 1135～1139

[14] [14] Ren Naifei, Xu Meiling, Gu Jiafang et al.. Analysis of thermalization dynamics on ferromagnetic thin film excited by femtosecond laser［J］. Chinese J. Lasers, 2010, 37(8): 2057～2062

[15] [15] Zhai Fengxiao, Li Simian, Huang Huan et al.. Transient optical response of Bi20Sb80 films induced by picosecond laser pulse［J］. Chinese J. Lasers, 2010, 37(10): 2620～2624

[16] [16] H. Huang, F. Y. Zuo, F. X. Zhai et al.. Crytallization dynamics of as-deposited amorphous AIST thin film induced by picosecond laser pulses［J］. J. Phys. D: Appl. Phys., 2011, 43(17): 175401

[17] [17] Y. Fukuyama, N. Yasuda, J. Kim et al.. Time-resolved investigation of nanosecond crystal growth in rapid-phase change materials: correlation with the recording speed of digital versatile disc media［J］. Appl. Phys. Exp., 2008, 1(4): 045001

[18] [18] G. F. Liang, K. Zhang, F. X. Zhai et al.. Comparison of optical and electrical transient response during nanosecond laser pulse-induced phase transition of Ge2Sb2Te5 thin films［J］. Chem. Phys. Lett., 2011, 507: 203～207

[19] [19] S. M. Wiggins, W. M. Gawelda, J. Solis et al.. Time resolved dynamics of melting and resolidification of Sb thin films under ns and ps laser pulse irradiation［J］. J. Appl. Phys., 2003, 94(8): 4961～4966

[20] [20] F. X. Zhai, F. Y. Zuo, H. Huang et al.. Optical switch formation in antimony super-resolution mask layers induced by picosecond laser pulses［J］. Chin. Phys. Lett., 2010, 27(1): 014209

[21] [21] J. Siegel, J. Solis, C. N. Afonso. Recalescence after solidification in Ge films melted by picosecond laser pulses［J］. Appl. Phys. Lett., 1999, 75(8): 1071～1073

[22] [22] J. Siegel, A. Schropp, J. Solis et al.. Rewritable phase-change optical recording in Ge2Sb2Te5 films induced by picosecond laser pulses［J］. Appl. Phys. Lett., 84(13): 2250～2252

[23] [23] K. Sokolowski-Tinren, J. Solis, J. Bialkowski et al.. Dynamics of ultrafast phase change in amorphours GeSb films［J］. Phys. Rev. Lett., 1998, 81(17): 3679～3682