Fig. 1. (a) Schematic of the resonant absorption structure based on dielectric–metal metasurface. (b) Theoretical absorption spectrum (blue line) and normalized average temperature increasing of the sensitive material upper surface, ΔT (red line). Normalized |E|-field distributions for the two absorption peaks at (c) λ=6.142  μm and (d) λ=7.795  μm. Inset shows the unit cell of the structure and parameter symbols.

Fig. 2. Optical properties of the metastructure absorber. The graphs show the spectra of absorption with different (a) period P, (b) width w, (c) height h, and (d) E-polarization.

Fig. 3. Temporal temperature distributions for (a) different substrate materials with the same incident flux I0=103  W/cm2 and (b) continuous wave and pulsed wave illumination when the system is suspended with incident flux I0=1.0  W/cm2.

Fig. 4. Temporal temperature distributions for different (a) pulse time t illumination and (b) heat transfer coefficients hhtc at t=1.0  ms when the system is suspended with incident flux I0=1.0  W/cm2.

Fig. 5. Temporal temperature distributions for 100× unit cells with incident flux I0=1.0  W/cm2 under CW and PW illumination. Inset shows the maps of temperature distributions at t=0.4  ms.

Fig. 6. Schematic of a single metasurface element used for both the electromagnetic and heat transfer simulations and their associated boundary conditions.

Fig. 7. (a), (b) |H|- and (c), (d) Qabs-field distributions for λ=6.142  μm and λ=7.795  μm, respectively.

Fig. 8. (a) Absorption spectrum. (b) Temporal temperature distributions under continuous wave and pulsed wave illumination with incident flux I0=1  W/cm2. Here, pulse (t)=1 for 0<t≤0.1  ms, and pulse(t)=0 otherwise. P=5700  nm, w=4000  nm.

Fig. 9. (a) Absorption spectra for different incident angle α. (b)–(d) Field distributions for |E|, |H|, and, Qabs at the additional absorption wavelength λ=6.865  μm [denoted by blue arrow in (a)], respectively.

Fig. 10. Temporal temperature distributions under continuous wave and pulsed wave illumination for different substrate materials (a) Si with I0=103  W/cm2 and (b) SiO2 with I0=15  W/cm2.

Fig. 11. Simulated temporal temperature distributions after excitation with a fs-pulse.