Photonics Research, Volume. 13, Issue 7, 1848(2025)

Photoelectric response in PMHT/Al2O3 heterostructure artificial synaptic transistors for neuromorphic computation

Yanmei Sun1,2、*, Yufei Wang1, and Qi Yuan1
Author Affiliations
  • 1School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
  • 2Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
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    Figures & Tables(4)
    (a), (b) The arrangement of transistors and the orientation of carrier motion within a synapse under varying gate voltages, both negative and positive. (c) The continuous increase in EPSC under negative gate voltage stimulation. (d) IPSC exhibits a gradual decline as the positive gate voltage magnitude increases from 4 to 10 V.
    (a) The stability of EPSC induced by red light. (b) The stability of EPSC induced by UV light. (c) The EPSC following training with red light and UV light. (d) The synaptic currents regulated by the light pulse counts. (e) Relationship between the increase in EPSC and pulse number. (f) The EPSC of the light pulse. (g) The training process of optical synapses, including learning, forgetting, and relearning.
    (a) The schematic illustration of skin sunburn caused by intense UV exposure. (b) The effects of varying UV exposure durations. (c) The effects of varying UV irradiation intervals. (d) The effects of varying numbers of UV pulses applied.
    (a) Light-electric-light stimulation. (b) Electric-light-electric stimulation. (c) Light-(light + electric)-light stimulation. (d)–(f) The corresponding peak current I30 for (a)–(c). (g) Schematic diagram of learning efficiency.
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    Yanmei Sun, Yufei Wang, Qi Yuan, "Photoelectric response in PMHT/Al2O3 heterostructure artificial synaptic transistors for neuromorphic computation," Photonics Res. 13, 1848 (2025)

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    Paper Information

    Category: Optical Devices

    Received: Dec. 9, 2024

    Accepted: Apr. 16, 2025

    Published Online: Jun. 18, 2025

    The Author Email: Yanmei Sun (sunyanmei@hlju.edu.cn)

    DOI:10.1364/PRJ.551577

    CSTR:32188.14.PRJ.551577

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