Chinese Journal of Lasers, Volume. 31, Issue s1, 516(2004)
On Growth Rate of the Ag Thin Film Versus Ambient Pressure in Pulse Laser Ablation
References(3)
[1] [1] Τ. Scharf, Η. U. Krebs. Influence of inert gas pressure on deposition rate during pulsed laser deposition [J]. Appl. Phys. A, 2002, 75:551-554
[2] [2] K Sturm, S. Fahler, H. U. Krebs. Pulsed laser deposition of metals in low pressure inert gas[J]. Appl. Surf. Sci., 2000, 154-155: 462-466
[3] [3] T. Yoshida, S. Takeyama, Y. Yamada et al.. Nanometer-sized silicon crystallites prepared by excimer laser ablation in constant pressure inert gas[J]. Appl. Phys. Lett., 1996, 68(13): 1772-1774
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WANG Ying-long, ZHOU Yang, FU Guang-sheng, PENG Ying-cai, CHU Li-zhi, ZHANG Rong-mei. On Growth Rate of the Ag Thin Film Versus Ambient Pressure in Pulse Laser Ablation[J]. Chinese Journal of Lasers, 2004, 31(s1): 516
Paper Information
Category: laser devices and laser physics
Received: --
Accepted: --
Published Online: Jan. 29, 2013
The Author Email: Ying-long WANG (hdwangyl@sina.com)
CSTR:32186.14.
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