Chinese Journal of Lasers, Volume. 31, Issue s1, 516(2004)
On Growth Rate of the Ag Thin Film Versus Ambient Pressure in Pulse Laser Ablation
In order to explain quantitatively the relation between the growth rate of Ag thin film and ambient gas pressure in the pulsed laser ablation, considering the dynamic process of the ablated particles in inert ambient and the deposition and resputtermg of thin films, supposing the probability of resputtering is proportional to kinetic energy of the ablated particles, the dynamic model of growing film is establish. The experiment result of T.Scharf et al. is explained quantitatively by considering the big grains.
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WANG Ying-long, ZHOU Yang, FU Guang-sheng, PENG Ying-cai, CHU Li-zhi, ZHANG Rong-mei. On Growth Rate of the Ag Thin Film Versus Ambient Pressure in Pulse Laser Ablation[J]. Chinese Journal of Lasers, 2004, 31(s1): 516
Category: laser devices and laser physics
Received: --
Accepted: --
Published Online: Jan. 29, 2013
The Author Email: Ying-long WANG (hdwangyl@sina.com)
CSTR:32186.14.