[1] ARDOSO J P S, CORREIA M R, VERMEERSCH R et al. Europium-implanted AlN nanowires for red light-emitting diodes[J]. ACS Applied Nano Materials, 5, 972-984(2022).

[2] ICHIKAWA S, SHIOMI K, MORIKAWA T et al. Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut[J]. Applied Physics Express, 14, 031008(2021).

[3] LOBOPLOCH N, MEHNKE F, SULMONI L et al. Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates[J]. Applied Physics Letters, 117, 111102(2020).

[4] WU H, ZHANG K, HE C et al. Recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate[J]. Crystals, 12, 38(2022).

[5] WEN Fei, TU Datao, LIAN Wei et al. Local site symmetry and luminescence manipulation of lanthanide doped disordered crystals[J]. Chinese Journal of Luminescence, 44, 1202-1219(2023).

[6] LOZYKOWSKI H J, JADWISIENCZAK W M. Thermal quenching of luminescence and isovalent trap model for rareearth-ion-doped AlN[J]. Physica Status Solidi (B), 244, 2109-2126(2007).

[7] ANDRES GUERRA J, MONTAÑEZ L, WINNACKER A et al. Thermal activation and temperature dependent PL and CL of Tb doped amorphous AlN and SiN thin films[J]. Physica Status Solidi (C), 12, 1186(2015).

[8] FAN Z, QIE Y, GUO D et al. Multicolor tunable emission and energy transfer in AlN: Tb3+, Eu3+ phosphors[J]. Journal of Materials Science: Materials in Electronics, 32, 210-218(2021).

[9] WANG Q, LI J, ZHANG W et al. Synthesis, and photoluminescence and magnetic properties of Tb-doped AlN single-crystalline nanobelts[J]. Journal of Luminescence, 236(2021).

[10] LOZYKOWSKI H J, JADWISIENCZAK W M, BENSAOULA A et al. Luminescence and excitation mechanism of Pr, Eu, Tb and Tm ions implanted into AlN[J]. Microelectronics Journal, 36, 453-455(2005).

[11] WANG X, MO Y, ZENG X et al. Simultaneous emission of red, green, and blue in Pr, Er, and Tm coimplanted GaN thin films[J]. Materials Chemistry and Physics, 199, 567-570(2017).

[12] WANG X, MO Y, YANG M et al. Cathodoluminescence properties of Pr, Tm co-implanted GaN thin films[J]. Optical Materials Express, 6, 1692-1700(2016).

[13] MAQBOOL M, KORDESCH M E, KAYANI A. Enhanced cathodoluminescence from an amorphous AlN: holmium phosphor by co-doped Gd3+ for optical devices applications[J]. Journal of the Optical Society of America B-optical Physics, 26, 998-1001(2009).

[14] MAQBOOL M, AHMAD I, RICHARDSON H H et al. Direct ultraviolet excitation of an amorphous AlN: praseodymium phosphor by co-doped Gd3+ cathodoluminescence[J]. Applied Physics Letters, 91, 193511(2007).

[15] CHEN Qiaoling, Shaozhen LÜ. White light emission in Pr3+, Tb3+∶ CaYAlO4 phosphor[J]. Optoelectronics Letters, 11, 370-374(2015).

[16] WEI W, PENG Y, WANG J et al. Temperature dependence of stress and optical properties in AlN films grown by MOCVD[J]. Nanomaterials, 11, 698(2021).

[17] DAVYDOV V, KITAEV YU E, GONCHARUK I et al. Phonon dispersion and Raman scattering in hexagonal GaN and AlN[J]. Physical Review B, 58, 12899-12907(1998).

[18] SUMATHI R R. Bulk AlN single crystal growth on foreign substrate and preparation of freestanding native seeds[J]. CrystEngComm, 15, 2232-2240(2013).

[19] KALLEL T, DAMMAK M, WANG J et al. Raman characterization and stress analysis of AlN: Er3+epilayers grown on sapphire and silicon substrates[J]. Materials Science and Engineering: B, 187, 46-52(2014).

[20] RUTERANA P, CHAUVAT M P, LORENZ K. Mechanisms of damage formation during rare earth ion implantation in nitride semiconductors[J]. Japanese Journal of Applied Physics, 52, 2(2013).

[21] SHUCK , LEEWH , PANYC et al. Optical and electrical investigations of isoelectronic In-doped GaN films[J]. Solid State Communications, 114, 291-293(2000).

[22] XU Zhenjia[M]. Testing and analysis of semiconductors, 202(2007).

[23] COOPER A S. Precise lattice constants of germanium, aluminum, gallium arsenide, uranium, sulphur, quartz and sapphire[J]. Acta Crystallographica, 15, 578-582(1962).

[24] QIAO Y P. Luminescence, energy transfer and tunable white emitting of borosilicate glass doubly doped with Tb/Sm or triply doped with Ce/Tb/Sm for white LEDs[J]. Materials Science and Engineering: B, 276, 115565(2022).

[25] ZHAO B, YUAN L, HU S et al. One-step hydrothermal synthesis of Sc2Mo3O12∶ Ln3+ (Ln=Eu, Tb, Dy, Tb/Eu, Dy/Eu) nanosheets and their multicolor tunable luminescence[J]. New Journal of Chemistry, 40, 9211-9222(2016).

[26] RODRIGUES J, FIALHO M, MAGALHAES S et al. Luminescence properties of MOCVD grown Al0.2Ga0.8N layers implanted with Tb[J]. Journal of Luminescence, 210, 413-424(2019).

[27] VIJAYAKUMAR M, VISWANATHAN K, MARIMUTHU K. Structural and optical studies on Dy3+, Tb3+ co-doped zinc leadfluoro-borophosphate glasses for white light applications[J]. Journal of Alloys and Compounds, 745, 306-318(2018).

[28] BAI Haibin, CHEN Xin, SHA Xuezhu et al. Temperature and concentration dependent luminescence and fluorescence kinetics temperature sensing of NaGd (MoO4)2∶ Tb3+ phosphors[J]. Chinese Journal of Luminescence, 44, 1770-1778(2023).

[29] WEN Y, WANG Y, ZHANG F et al. Near-ultraviolet excitable Ca4Y6(SiO4)6O: Ce3+, Tb3+ white phosphors for light-emitting diodes[J]. Materials Chemistry and Physics, 129, 1171-1175(2011).

[30] BLASSE G. Energy transfer in oxidic phosphors[J]. Physics Letters A, 28, 444-445(1968).

[31] VAN UITERT LG. Characterization of energy transfer interactions between rare earth ions[J]. The Electrochemical Society, 114, 1048(1967).

[32] SUN Jiayue, DU Haiyan, HU Wenxiang[M]. Solid luminescent material, 152-153(2003).

[33] MCCAMY C S. Correlated color temperature as an explicit function of chromaticity coordinates[J]. Color Research & Application, 17, 142-144(1992).