Journal of Semiconductors, Volume. 40, Issue 9, 091101(2019)
Some recent advances in ab initio calculations of nonradiative decay rates of point defects in semiconductors
Fig. 1. (Color online) A schematic energy diagram of the phonon degree of freedom at the initial electronic state
Fig. 2. (Color online) The comparison of transition rates calculated using different formulas for the nonradiative transition of electron from the conduction band of bulk GaP to the ZnGa + OP point defect. Marcus theory, quantum CT rate, 1D by Alkauskas's code, and 1D by our code, are all one dimensional models. They all give very similar results. Compared with experiment, the multiphonon static coupling formula gives the best results, while the adiabatic coupling results are almost two order of magnitudes smaller. In (a), the calculations are done using the
Fig. 3. (Color online) The nonradiative electron transition rates for a hole from the valence band edge to a ZnGa+VN complex defect state in GaN. The high temperature formula result is compared with direct
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Linwang Wang. Some recent advances in ab initio calculations of nonradiative decay rates of point defects in semiconductors[J]. Journal of Semiconductors, 2019, 40(9): 091101
Category: Reviews
Received: Aug. 18, 2019
Accepted: --
Published Online: Sep. 22, 2021
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