Fig. 1. (Color online) the structure of NC-FinFET.

Fig. 2. (Color online) The subthreshold swing improved by NC compared to the baseline.

Fig. 3. The schematic of traditional 6T SRAM-cell.

Fig. 4. The simulation flow chart for analysis the performance variation for the 6T SRAM, and the compact model is the BSIM-CMG cooperating L-K equations.

Fig. 5. (Color online) The V_T mismatch between n-type and p-type NC-FinFET under the same process: when the thickness of ferroelectric material increases, the mismatch gets worse.

Fig. 6. (Color online) (a) Read speed, (b) leakage, (c) SNM, and (d) WM of NC-FinFET SRAM influenced by the thickness of ferroelectric material.

Fig. 7. (Color online) (a) Read speed, (b) leakage, (c) SNM, and (d) WM of NC-FinFET SRAM influenced by the fin number of baseline with fixed FE thickness 3 nm.

Fig. 8. (Color online) (a) Read speed, (b) leakage, (c) SNM, and (d) WM of NC-FinFET SRAM influenced by the channel length of baseline with one fin.

Fig. 9. (Color online) (a) Read speed, (b) leakage, (c) SNM, and (d) WM of NC-FinFET SRAM influenced by temperature with one fin and supply voltage ranges from 0.5 to 0.7 V.