Fig. 1. (Color online) (a) The fabrication flow of the fabrication of NC FinFET. (b) Cross-sectional TEM image of the NC FinFET device. (c) Schematic diagram of the resistive load inverter characterization single-transistor frequency characteristics test circuit. (d) Schematic diagram of the optimization measurement scheme.

Fig. 2. (Color online) Real-time output data of the load-resistance based inverter measurement, with the gate pulse width (a) 1 ms, and (b) 10 μs, respectively.

Fig. 3. (Color online) Experimentally measured output voltage as a function of the applied gate signal frequencies.

Fig. 4. Waveforms of different frequencies displayed directly on the oscilloscope after resistive loading, (a)10 kHz and (b) 100 kHz.

Fig. 5. (Color online) The measured real-time pulse train on-current of single-transistor.

Fig. 6. (Color online) Measured transient currents of the single transistor, (a) with 10 ms pulse width, (b) with 1 μs pulse width, (c) variation of the extracted on-state currents of the single-transistor with frequency at different gate voltages.

Fig. 7. (Color online) Real-time test results of on-state I_DS of the NC FinFET.

Fig. 8. (Color online) Experimentally measured variation of the on-state current with pulse width for NC FinFET and conventional FinFET. (a) NMOS. (b) PMOS.