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Chinese Journal of Lasers, Volume. 51, Issue 13, 1301004(2024)

Output Facet Temperature of High-Power Semiconductor Lasers Using Optical-Thermal Reflection Method

Zibang Xu1,2,3, Xinlian Miao1,2,3, Yuxian Liu4, Yu Lan4, Yuliang Zhao4, Xiang Zhang1,2,3, Guowen Yang5, and Xiao Yuan1,2,3、*
Author Affiliations
  • 1School of Optoelectronic Science and Engineering, Soochow University, Suzhou 215006, Jiangsu , China
  • 2Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province, Suzhou 215006, Jiangsu , China
  • 3Key Lab of Modern Optical Technologies of Education Ministry of China, Suzhou 215006, Jiangsu , China
  • 4State Key Laboratory of Transient Optics and Photonics, Xi an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi an 710119, Shaanxi , China
  • 5Dogain Optoelectronic Technology (Suzhou) Co., Ltd. , Suzhou 215000, Jiangsu , China
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    Article index updated: Sep. 26, 2025

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    Zibang Xu, Xinlian Miao, Yuxian Liu, Yu Lan, Yuliang Zhao, Xiang Zhang, Guowen Yang, Xiao Yuan. Output Facet Temperature of High-Power Semiconductor Lasers Using Optical-Thermal Reflection Method[J]. Chinese Journal of Lasers, 2024, 51(13): 1301004

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    Paper Information

    Category: laser devices and laser physics

    Received: Dec. 25, 2023

    Accepted: Jan. 30, 2024

    Published Online: Jun. 22, 2024

    The Author Email: Xiao Yuan (xyuan@suda.edu.cn)

    DOI:10.3788/CJL231574

    CSTR:32183.14.CJL231574

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology