Extended Short‑Wave Infrared InAs/AlSb Type Superlattice Photoluminescence Spectrum

Jing Yu; Yuegang Fu; Lidan Lu; Weiqiang Chen; Yuting Pan; Lianqing Zhu

doi:10.3788/AOS250525

Acta Optica Sinica, Volume. 45, Issue 9, 0916003(2025)

Extended Short‑Wave Infrared InAs/AlSb Type Superlattice Photoluminescence Spectrum

Jing Yu^1,2, Yuegang Fu¹, Lidan Lu², Weiqiang Chen², Yuting Pan¹, and Lianqing Zhu^2、*

Author Affiliations

¹School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130012, Jilin , China

²School of Instrumentation Science and Opto-Electronics Engineering, Beijing Information Science and Technology University, Beijing 100192, China

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Figures & Tables(8)

Fig. 1. AFM test results of InAs/AlSb SL at different growth temperatures. (a) T_c-45 ℃; (b) T_c-15 ℃; (c) T_c+30 ℃

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Fig. 2. PL test results of sample S3 at 10‒300 K. (a) Temperature-dependent PL spectra; (b) PL peak positions and PL FWHMs extracted from PL spectra; (c) comparison of PL FWHMs between sample S2 and S3

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Fig. 3. HRXRD test results and fitting of each sample. (a) Sample S3; (b) sample S7; (c) sample S8

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Fig. 4. PL peak positions and PL FWHMs extracted by PL spectra at 10‒290 K. (a) Sample S7; (b) sample S8

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Fig. 5. Relationships between PL intensity and excitation power (L) at 10, 50, 90, 130, 210, and 290 K. (a) Sample S3; (b) sample S7; (c) sample S8; (d) c value extracted by power law fitting

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Table 1. Shutter sequence and time of 8 ML InAs/2 ML AlSb SL structure growth
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Table 1. Shutter sequence and time of 8 ML InAs/2 ML AlSb SL structure growth
Sequence AlSb Sb In InAs In Sb
Monolayer 1.98 - 0.30 7.55 0.30 -
Time /s 6.1 3.0 1.0 21.5 1.0 3.0

Table 2. AFM and HRXRD characterizations of InAs/AlSb SL samples under different growth conditions

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Table 2. AFM and HRXRD characterizations of InAs/AlSb SL samples under different growth conditions

Sample	Temperature	As/In fluxes ratio	50 μm×50 μm RMS roughness /nm	Thickness /nm	HRXRD SL0 mismatch /%	HRXRD FWHM /arcsec
S1	T_c-45 ℃	7	0.5（-2.7‒3.5）	3.047	-0.10	62.7
S2	T_c-30 ℃	7	0.3（-1.2‒1.3）	3.054	-0.03	58.5
S3	T_c-15 ℃	7	0.2（-1.2‒1.1）	3.057	+0.03	50.7
S4	T_c	7	0.2（-1.2‒1.2）	3.060	+0.11	52.9
S5	T_c+15 ℃	7	0.2（-1.2‒1.2）	3.063	+0.18	58.3
S6	T_c+30 ℃	7	0.8（-3.2‒35）	3.067	+0.37	65.4

Table 3. PL characteristics of InAs/AlSb SL at different temperatures

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Table 3. PL characteristics of InAs/AlSb SL at different temperatures

Sample	Varshni fitting parameter			Segall fitting parameter	Power law fit
Sample	E_g（0） /eV	α /（meV/K）	β /K	ℏω /meV	80 K	140 K	200 K
S2	0.504	0.168	340	36.23	1.046	1.318	1.406
S3	0.511	0.108	47	34.72	1.055	1.292	1.381
S4	0.521	0.121	114	37.21	1.124	1.345	1.416
S5	0.528	0.175	147	41.28	1.212	1.376	1.478

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Jing Yu, Yuegang Fu, Lidan Lu, Weiqiang Chen, Yuting Pan, Lianqing Zhu. Extended Short‑Wave Infrared InAs/AlSb Type Superlattice Photoluminescence Spectrum[J]. Acta Optica Sinica, 2025, 45(9): 0916003

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