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Acta Physica Sinica, Volume. 69, Issue 8, 086101-1(2020)

Effect of source-drain conduction in single-event transient on nanoscaled bulk fin field effect transistor

Chao Lu1,2, Wei Chen2、*, Yin-Hong Luo2, Li-Li Ding2, Xun Wang2, Wen Zhao2, Xiao-Qiang Guo2, and Sai Li3
Author Affiliations
  • 1Key Laboratory of Particle and Radiation Imaging of Ministry of Education, Department of Engineering Physics, Tsinghua University, Beijing 100084, China
  • 2State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
  • 3National Space Science Center, Chinese Academy of Sciences, Beijing 101400, China
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    Chao Lu, Wei Chen, Yin-Hong Luo, Li-Li Ding, Xun Wang, Wen Zhao, Xiao-Qiang Guo, Sai Li. Effect of source-drain conduction in single-event transient on nanoscaled bulk fin field effect transistor[J]. Acta Physica Sinica, 2020, 69(8): 086101-1

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    Paper Information

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    Received: Dec. 15, 2019

    Accepted: --

    Published Online: Nov. 24, 2020

    The Author Email:

    DOI:10.7498/aps.69.20191896

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology