[1] Shao Xiu-Mei, Gong Hai-Mei, Li Xue et al. Developments of high performance short-wave infrared InGaAs focal plane detectors[J]. Infrared Technology, 38, 629-635(2016).

[2] Li X, Gong H M, Fang J X et al. The development of InGaAs short wavelength infrared focal plane arrays with high performance[J]. Infrared Physics & Technology, 80, 112-119(2017).

[3] Arslan Y, Oguz F, Besikci C. 640×512 Extended short wavelength infrared In0.83Ga0.17As focal plane array[J]. IEEE Journal of Quantum Electronics, 50, 957-964(2014).

[4] Kappers M J, Zhu T, Sahonta S L et al. SCM and SIMS investigations of unintentional doping in III-nitrides[J]. Physica Status Solidi (c), 12, 403-407(2015).

[5] Peiner E. Doping profile analysis in Si by electrochemical capacitance-voltage measurements[J]. Journal of the Electrochemical Society, 142, 576-580(1995).

[6] Kechang S, Baribeau J M, Houghton D C et al. Determination of the depth distribution of carriers in silicon molecular beam epitaxially grown material by electrochemical capacitance-voltage measurements[J]. Thin Solid Films, 184, 47-54(1990).

[7] Huang Y, Williams C C, Smith H. Direct comparison of cross-sectional scanning capacitance microscope dopant profile and vertical secondary ion-mass spectroscopy profile[J]. Journal of Vacuum Science & Technology B: Microelectronics & Nanometer Structures, 14, 433-436(1996).

[8] Eyben P, Duhayon N, Stuer C et al. SSRM and SCM observation of modified lateral diffusion of As, BF2 and Sb induced by nitride spacers[J]. MRS Online Proceedings Library Archive, 669, 781-791(2001).

[9] Yin H, Li T X, Wang W et al. Scanning capacitance microscopy investigation on InGaAs/InP avalanche photodiode structures: Light-induced polarity reversal[J]. Applied Physics Letters, 95, 093506(2009).

[10] Yin H, Li Y, Wang W et al. Scanning capacitance microscopy characterization on diffused p-n junctions of InGaAs/InP infrared detectors[J]. Proc. of SPIE, 7658, 237-238(2010).

[11] Walker A W, Denhoff M W. Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications[J]. Proc. of SPIE, 10177, 101772D(2017).

[12] Xia H, Li T X, Tang H J et al. Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector[J]. Scientific Reports, 6, 21544(2016).

[13] He S, Zhao Y. An experimental investigation of Zn diffusion into InP and InGaAs[J]. Semiconductor Science & Technology, 56, 149-151(2005).

[14] Djedidi A, Rouvie A, Reverchon J L et al. Investigation of the influence of Zn-diffusion profile on the electrical properties of InGaAs/InP photodiodes[C](2012).

[15] Hao Guo-Qiang. Study on physics and devices of InGaAs infrared detectors[D](2006).

[16] Wichman A R, Dewames R E, Bellotti E. Three-dimensional numerical simulation of planar P+n heterojunction In0.53Ga0.47As photodiodes in dense arrays part I: dark current dependence on device geometry[C], 9070, 907003(2014).

[17] Dewames R, Littleton R, Witte K et al. Electro-Optical characteristics of P+n In0.53Ga0.47As hetero-junction photodiodes in large format dense focal plane arrays[J]. Journal of Electronic Materials, 44, 1-10(2015).

[18] Yorinobu K, Naoharu N, Noriyuki K et al. Lateral diffusion distance measurement of 40-80 nm junctions by etching/TEM-Electron energy loss spectroscopy method[J]. Japanese journal of applied physics, 38, 2314-2318(1999).

[19] Tilley R J D. Chapter 7. Diffusion[M]. John Wiley & Sons, Ltd, 203-223(2005).

[20] Kim J S, Lee S W, Kim H M et al. The contraction of lattice constant and the reduction of growth rate in p-InGaAs grown by organometallic vapor phase epitaxy[J]. Journal of Electronic Materials, 24, 1697-1701(1995).

[21] Liu Ying-Bin, Chen Hong-Tai, Lin Lin et al. Zn diffusion of InGaAs/InP materials[J]. Semiconductor Technology, 33, 63-65(2008).

[22] Deng Hong-Hai, Wei Peng, Zhu Yao-Ming et al. Annealing process on Zn diffusion and its application in fabrication of InGaAs detectors[J]. Infrared and Laser Engineering, 41, 279-283(2012).

[23] Redinbo G F, Craighead H G. Lateral diffusion limitations of InGaAs/GaAs for nanostructure fabrication[J]. Mrs Proceedings, 380, 67-72(1995).

[24] Li X, Tang H, Fan G et al. 256×1 Element linear InGaAs short wavelength near-infrared detector arrays[J]. Proc. of SPIE, 6835, 683505(2007).

[25] Li Tao, Wang Yang, Li Ke-Fu et al. Investigation on dark current and low frequency noise of mesa type InGaAs infrared detector[J]. Journal of Optoelectronics·laser, 21, 500-503(2010).

[26] Tang Heng-Jing, Wu Xiao-Li, Zhang Ke-Feng et al. Current-voltage characteristics of InGaAs linear detector[J]. Infrared and Laser Engineering, 37, 598-601(2008).