Chinese Optics Letters, Volume. 23, Issue 8, 081402(2025)
Optimized thermal management in 976 nm photonic crystal laser diodes
Figures & Tables(11)
Fig. 1. 3D heat dissipation model of a PC LD with the CS-mount package.
Fig. 2. Effect of heat sink (a) length and (b) width on the device junction temperature and thermal resistance.
Fig. 3. Effect of heat sink thickness on the device junction temperature and thermal resistance.
Fig. 4. Steady-state thermal characteristics of (a) the traditional CS-mount heat sink and (b) the size-optimized CS-mount heat sink.
Fig. 5. (a) 3D model of the compound heat dissipation structure with the diamond transition heat sink. (b) Effect of the diamond transition heat sink thickness on the device. The inset shows the simulation results of the steady-state thermal characteristic temperature distribution of the compound heat sink structure at 0.5 mm.
Fig. 6. Output characteristics of three different package structures under 35 W CW output power. (a) P-I characteristics and (b) spectrum characteristics.
Fig. 7. Performance curves for a device with Structure C package operating at 60 A, with results at (a) 20°C and (b) 5°C.
Fig. 8. Horizontal (blue line) and vertical (red line) far-field angle of the PC LD packaged with Structure C.
Table 1. Materials and Parameters of Each Structural Layer
View tableView in ArticleTable 1. Materials and Parameters of Each Structural Layer
Layer Material Thermal conductivity (W·m-1·K-1) Heat capacity (J·kg-1·K-1) Density (kg·m-3) Electrode Au 317 129 19300 Substrate GaAs 46 330 5500 Lower cladding Al0.3GaAs 13.72 294 4852 Lower waveguide Al0.2GaAs 22.52 306 5008 Active region In0.2GaAs 50 300 5384 Upper waveguide Al0.2GaAs 22.52 306 5008 Upper cladding Al0.5GaAs 11 270 4540 Insulation layer SiO2 1.4 730 2200 Contact layer GaAs 46 330 5500 Electrode Au 317 129 19300 Ceramic plate Cu/AlN/Cu 220 600 3300 Solder layer In 81.6 233 7290 Heat sink Au/Cu/Au 400 385 8960
Table 2. Material Properties and Parameters of the Transition Heat Sink
View tableView in ArticleTable 2. Material Properties and Parameters of the Transition Heat Sink
Material Thermal conductivity (W·m-1·K-1) CTE (10-6 K-1) Young’s modulus (GPa) Poisson’s ratio Diamond 1200 1.5 1143 0.069 SiC 490 4.3 221 0.21 BeO 260 6.8 345 0.26 AlN 220 4.6 310 0.26 WCu 180 6.5 315 0.30 Cu 400 17 110 0.35 GaAs 46 5.7 83 0.31
Table 3. Experimental Results of Three Different Package Structures at 35 W
View tableView in ArticleTable 3. Experimental Results of Three Different Package Structures at 35 W
Heat sink structure Experiment Simulation I@35 W (A) λ@35 W (nm) ΔT@35 W (°C) Rth (K/W) Rth (K/W) Structure A 37.5 980.22 35.78 1.40 1.37 Structure B 38.2 980.85 38.03 1.46 1.41 Structure C 36.7 978.14 28.35 1.17 1.12
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Liang Wang, Yu Zhang, Hongwei Qu, Aiyi Qi, Xuyan Zhou, Yufei Wang, Jiatong Sui, Chuanwang Xu, Wanghua Zheng, "Optimized thermal management in 976 nm photonic crystal laser diodes," Chin. Opt. Lett. 23, 081402 (2025)
Paper Information
Category: Lasers, Optical Amplifiers, and Laser Optics
Received: Jan. 8, 2025
Accepted: Apr. 7, 2025
Published Online: Jul. 15, 2025
The Author Email: Hongwei Qu (quhw@semi.ac.cn), Wanghua Zheng (whzheng@semi.ac.cn)
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