Chinese Optics Letters, Volume. 22, Issue 5, 052501(2024)

Double-cliff-layer uni-traveling-carrier photodiode with high responsivity and ultra-broad bandwidth

Yaru Han1, Yuxin Tian1, Bing Xiong1、*, Changzheng Sun1, Jian Wang1, Zhibiao Hao1, Yanjun Han1,2, Lai Wang1, Hongtao Li1, Lin Gan1, and Yi Luo1,2
Author Affiliations
  • 1Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
  • 2Flexible Intelligent Optoelectronic Device and Technology Center, Institute of Flexible Electronics Technology of THU, Jiaxing 314006, China
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    References(28)

    [12] C. Renaud, D. Moodie, M. Robertson et al. High output power at 110 GHz with a waveguide uni-travelling carrier photodiode. LEOS 2007–IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 782(2007).

    [27] J. S. Morgan, K. Sun, Q. Li et al. High-power flip-chip bonded modified uni-traveling carrier photodiodes with −2.6 dBm RF output power at 160 GHz. IEEE Photonics Conference (IPC), 1(2018).

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    Yaru Han, Yuxin Tian, Bing Xiong, Changzheng Sun, Jian Wang, Zhibiao Hao, Yanjun Han, Lai Wang, Hongtao Li, Lin Gan, Yi Luo, "Double-cliff-layer uni-traveling-carrier photodiode with high responsivity and ultra-broad bandwidth," Chin. Opt. Lett. 22, 052501 (2024)

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    Paper Information

    Category: Optoelectronics

    Received: Oct. 27, 2023

    Accepted: Jan. 3, 2024

    Posted: Feb. 5, 2024

    Published Online: May. 20, 2024

    The Author Email: Bing Xiong (bxiong@tsinghua.edu.cn)

    DOI:10.3788/COL202422.052501

    CSTR:32184.14.COL202422.052501

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