Semiconductor Optoelectronics, Volume. 46, Issue 3, 416(2025)
CMOS Movement-Temperature-Coefficient Correction Model and Effect Verification
CMOS image sensors are characterized by low power consumption, low cost, high integration, high response speed, and high temperature-measurement limit, and are widely used for measuring radiation temperature. During a field experiment, the movement temperature of a CMOS image sensor fluctuates depending on the environmental temperature, which consequently alters the background grayscale and response coefficient, thus affecting the quantitative ability of the CMOS movement and increasing the temperature-measurement error. We propose a universal calibration method to address this issue. By constructing a temperature-calibration model for the background grayscale and response coefficient, we achieve stable CMOS movement values under different environmental temperatures and improve the temperature-measurement accuracy. We simulate environmental temperature changes from 273.2 to 313.2 K in an external field using high- and low-temperature chambers and use a standard high-temperature blackbody to obtain test data for a CMOS image sensor on a 1 073.2 K target. Experimental results show that this correction method can reduce the maximum temperature difference recorded by the CMOS image sensor from 10.9 to 2.2 K in a 273.2~313.2 K environment.
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ZHU Xuewu, ZHAN Chunlian, GUO Jing, GAO Han, WANG Jiapeng, YU Changben, KONG Deren, SHANG Fei, XU Chundong. CMOS Movement-Temperature-Coefficient Correction Model and Effect Verification[J]. Semiconductor Optoelectronics, 2025, 46(3): 416
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Received: Jul. 29, 2024
Accepted: Sep. 18, 2025
Published Online: Sep. 18, 2025
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