[1] [1] XI J T, YU Y G, CHICHARO J F, et al.Estimating the parameters of semiconductor lasers based on weak optical feedback self-mixing interferometry［J］.IEEE Journal of Quantum Electronics, 2005, 41(8)：1058-1064.

[2] [2] BOSCH T.An overview of self-mixing sensing applications［C］.Optoelectronic and Microelectronic Materials and Devices, 2004：385-392.

[3] [3] OTTONELLI S, DABBICCO M, DE LUCIA F, et al.Laser self-mixing interferometry for mechatronics applications［J］.Sensors, 2009, 9(5)：3527-3548.

[4] [4] O'BRIEN D, MCINERNEY J, WHITE J.Temperature performance of AlGaInAs semiconductor lasers［C］.Lasers and Electro-Optics Society Annual Meeting-LEOS, 2001(2)：806-807.

[5] [5] BYRNE D M, KEATING B A.A laser diobe model based on temperature dependent rate equations.IEEE Photonics Technology Letters, 1989, 1(11)：356-359.

[6] [6] HUANG Y, LI Y, WANG H, et al.Wavelength stabilization of a 980nm semiconductor laser module stabilized with high-power Uncooled dual FBG［J］.Chinese Optics Letters, 2001, 9(3)：57-61.

[7] [7] CHEN MIAO, CHEN FUSHEN, XIAO YONG.The effect of temperature on semiconductor lasers［J］.China Science and Technol-ogy Information, 2011, 2(3)：46-47.

[8] [8] XIN QIANQIAN, WAN YI, BI WENBO, et al.Study on modeling and experiment of wavelength temperature characteristic for semiconductor laser［J］.Tool Technology, 2017(12)：132-134.

[9] [9] SHAN CHENGYU.The influence of temperature on the performance parameters of semiconductor laser［J］.Journal of Jilin Normal University(Natural Science Edition), 2003, 24(4)：95-97.

[10] [10] HUANG HAI HUA, LIU LUN, YANG YE, et al.Temperature characteristics of 850 nm tapered semiconductor lasers［J］.Chinese Optics, 2016, 6(2)：201-207.

[11] [11] HE PEIWEN.The influence of ambient temperature on the output power of semiconductor laser［J］.Science & Technology Vision, 2016(7)：171-171.

[12] [12] DUAN Hui.Dissertation for the master degree in engineering［D］.Qinhuangdao：Yanshan University, 2010.